| No. |
Part Name |
Description |
Manufacturer |
| 241 |
APT5030BN |
POWER MOS IV 500V 23.0A 0.25 Ohm / 500V 21.0A 0.30 Ohm |
Advanced Power Technology |
| 242 |
APT6030BN |
POWER MOS IV 600V 22.0A 0.33 Ohm / 600V 23.0A 0.30 Ohm |
Advanced Power Technology |
| 243 |
APT6033BN |
POWER MOS IV 600V 22.0A 0.33 Ohm / 600V 23.0A 0.30 Ohm |
Advanced Power Technology |
| 244 |
AR3007S30 |
3000 V, 2300 A, 30.2 kA rectifier diode |
POSEICO SPA |
| 245 |
AR447PCS24 |
2400 V, 2395 A, 18 kA rectifier diode |
POSEICO SPA |
| 246 |
AT71200M |
Full field image sensor 3500 x 2300 pixels, 4 x 25 MHz |
Atmel |
| 247 |
ATP212 |
N-Channel Power MOSFET, 60V, 35A, 23mOhm, Single ATPAK |
ON Semiconductor |
| 248 |
ATP216 |
N-Channel Power MOSFET, 50V, 35A, 23mOhm, Single ATPAK |
ON Semiconductor |
| 249 |
BAS21LT1 |
CASE 318 08, STYLE 8 SOT 23 (TO 236AB) |
Motorola |
| 250 |
BAS21LT1 |
CASE 318 08, STYLE 8 SOT 23 (TO 236AB) |
Motorola |
| 251 |
BAS4004LT1 |
CASE 318 08, STYLE 12 SOT 23 (TO 236AB) |
Motorola |
| 252 |
BAS4004LT1 |
CASE 318 08, STYLE 12 SOT 23 (TO 236AB) |
Motorola |
| 253 |
BAS70LT1 |
CASE 318 08, STYLE 8 SOT 23 (TO 236AB) |
Motorola |
| 254 |
BAS70LT1 |
CASE 318 08, STYLE 8 SOT 23 (TO 236AB) |
Motorola |
| 255 |
BGA416 |
Silicon MMICs - DC ... 3GHz, 23dB, 62dB Isol. Cascode Amp. in SOT143 |
Infineon |
| 256 |
BSS84AKM |
50 V, 230 mA P-channel Trench MOSFET |
Nexperia |
| 257 |
BSS84AKM |
50 V, 230 mA P-channel Trench MOSFET |
NXP Semiconductors |
| 258 |
BUK7K23-80E |
Dual N-channel 80 V, 23 mΩ standard level MOSFET |
Nexperia |
| 259 |
BUK9M23-80E |
N-channel 80 V, 23 mΩ logic level MOSFET in LFPAK33 |
Nexperia |
| 260 |
BUZ10 |
Trans MOSFET N-CH 50V 23A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 261 |
BUZ10 |
N - CHANNEL 50V - 0.06Ohm - 23A TO-220 STripFET MOSFET |
SGS Thomson Microelectronics |
| 262 |
BUZ10 |
N-CHANNEL 50V - 0.06 OHM - 23A TO-220 STRIPFET POWER MOSFET |
ST Microelectronics |
| 263 |
BUZ10L |
Trans MOSFET N-CH 50V 23A |
New Jersey Semiconductor |
| 264 |
BZW06-239 |
600 W unidirectional and bidirectional transient voltage suppressor diodes, 239V |
Fagor |
| 265 |
BZW06-239B |
600 W unidirectional and bidirectional transient voltage suppressor diodes, 239V |
Fagor |
| 266 |
BZW06-23B |
Diode TVS Single Bi-Dir 23.1V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
| 267 |
C702CB |
Phase Control SCR 1000 Amperes Avg 2300-3200 Volts |
Powerex Power Semiconductors |
| 268 |
C702CP |
Phase Control SCR 1000 Amperes Avg 2300-3200 Volts |
Powerex Power Semiconductors |
| 269 |
C702LC |
Phase Control SCR 1000 Amperes Avg 2300-3200 Volts |
Powerex Power Semiconductors |
| 270 |
C702LD |
Phase Control SCR 1000 Amperes Avg 2300-3200 Volts |
Powerex Power Semiconductors |
| | | |
