No. |
Part Name |
Description |
Manufacturer |
241 |
HYB25D128323CL3.6 |
Specialty DRAMs - 275MHz (4M x 32) Low power |
Infineon |
242 |
IRF234 |
8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs |
Intersil |
243 |
IRF235 |
8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs |
Intersil |
244 |
IRF236 |
8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs |
Intersil |
245 |
IRF237 |
8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs |
Intersil |
246 |
IRF244 |
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs |
Intersil |
247 |
IRF245 |
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs |
Intersil |
248 |
IRF246 |
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs |
Intersil |
249 |
IRF247 |
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs |
Intersil |
250 |
IRF646 |
14A, 275V, 0.280 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
251 |
IRF646 |
14A/ 275V/ 0.280 Ohm/ N-Channel Power MOSFET |
Intersil |
252 |
IRFP244 |
15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs |
Intersil |
253 |
IRFP245 |
15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs |
Intersil |
254 |
IRFP246 |
15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs |
Intersil |
255 |
IRFP247 |
15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs |
Intersil |
256 |
IRFP247 |
15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs |
Intersil |
257 |
ISL98001-275 |
Advanced 275MHz Triple Video Digitizer with Digital PLL |
Intersil |
258 |
KAD2708C-27 |
8-Bit, 275MSPS A/D Converter |
Intersil |
259 |
KAD2708L-27 |
8-Bit, 275MSPS A/D Converter |
Intersil |
260 |
KAD2710C-27 |
10-Bit, 275MSPS Single-Channel ADC, LVCMOS Outputs |
Intersil |
261 |
KAD2710L-27 |
10-Bit, 275MSPS Single-Channel ADC, LVDS Outputs |
Intersil |
262 |
MKP 336 1 X1 |
Class X1, AC 275V, C-range 1nF-1µF, 10-27,5mm pitch, boxed |
Vishay |
263 |
MKP 336 2 X2 |
Class X2, AC 275V, C-range 1nF-2,2µF, 10-27,5mm pitch, boxed |
Vishay |
264 |
MKP 338 2 X2 |
Class X2, AC 275V, C-range 1nF-3,3µF, 7,5-27,5mm pitch, boxed |
Vishay |
265 |
MKP 339 X 2 |
Class X2, AC 275V, C-range 1nF-4,7µF, 7,5-27,5mm pitch, boxed |
Vishay |
266 |
NTE5185A |
Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 9.1V. Zener test current Izt = 275mA. |
NTE Electronics |
267 |
P4KE250C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 225 V, Vbr(max) = 275 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
268 |
P6KE250C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 225 V, Vbr(max) = 275 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
269 |
PTRA083818NF-V1 |
High Power RF LDMOS FET 275W, 48V, 733 - 805 MHz |
Wolfspeed |
270 |
RCA1805 |
Silicon transistor for audio-amplifier applications. 275V, 150W. |
General Electric Solid State |
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