| No. |
Part Name |
Description |
Manufacturer |
| 241 |
28LV256TM-6 |
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 242 |
28LV256TM-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
| 243 |
29C256 |
256K 32K x 8 5-volt Only CMOS Flash Memory |
Atmel |
| 244 |
2N6235 |
Trans GP BJT NPN 325V 5A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
| 245 |
2N7002PS |
60 V, 320 mA dual N-channel Trench MOSFET |
Nexperia |
| 246 |
2N7002PS |
60 V, 320 mA dual N-channel Trench MOSFET |
NXP Semiconductors |
| 247 |
2SD1055 |
Medium Power Transistor 32V/ 2A |
ROHM |
| 248 |
2SD1227M |
Medium Power Transistor 32V/ 2A |
ROHM |
| 249 |
2SD1919 |
Medium Power Transistor 32V/ 2A |
ROHM |
| 250 |
2SK3557 |
N-Channel JFET, 15V, 10 to 32mA, 35mS, CP |
ON Semiconductor |
| 251 |
30KP320A |
Diode TVS Single Uni-Dir 320V 30KW 2-Pin Case D-6 |
New Jersey Semiconductor |
| 252 |
30KP320CA |
Diode TVS Single Bi-Dir 320V 30KW 2-Pin Case D-6 |
New Jersey Semiconductor |
| 253 |
30KPA320 |
Diode TVS Single Uni-Dir 320V 30KW 2-Pin |
New Jersey Semiconductor |
| 254 |
30KPA320A |
Diode TVS Single Uni-Dir 320V 30KW 2-Pin |
New Jersey Semiconductor |
| 255 |
30KPA320C |
Diode TVS Single Uni-Dir 320V 30KW 2-Pin |
New Jersey Semiconductor |
| 256 |
30KPA320CA |
Diode TVS Single Bi-Dir 320V 30KW 2-Pin |
New Jersey Semiconductor |
| 257 |
32170 |
SINGLE-CHIP 32-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
| 258 |
376 |
HIGH PERFORMANCE 32-BIT EMBEDDED PROCESSOR |
Intel |
| 259 |
3DS16-325 |
512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating |
3D PLUS |
| 260 |
3DS16-325SC-15 |
512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating |
3D PLUS |
| 261 |
3DS16-325SC-20 |
512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating |
3D PLUS |
| 262 |
3DS16-325SI-15 |
512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating |
3D PLUS |
| 263 |
3DS16-325SI-20 |
512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating |
3D PLUS |
| 264 |
42S16800A |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
Integrated Silicon Solution Inc |
| 265 |
42S32200 |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
| 266 |
5962-0323601QXA |
128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish hot solder dipped. |
Aeroflex Circuit Technology |
| 267 |
5962-0323601QXC |
128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish gold. |
Aeroflex Circuit Technology |
| 268 |
5962-0323601QXX |
128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish factory option. |
Aeroflex Circuit Technology |
| 269 |
5962-0323601VXA |
128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish hot solder dipped. |
Aeroflex Circuit Technology |
| 270 |
5962-0323601VXC |
128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish gold. |
Aeroflex Circuit Technology |
| | | |
