| No. |
Part Name |
Description |
Manufacturer |
| 241 |
1S5036A |
Silicon power zener diode 10W 36V, ±5% tolerance |
Texas Instruments |
| 242 |
1S5036C |
Silicon power zener diode 10W 36V, double anode |
Texas Instruments |
| 243 |
1S5036R |
Silicon power zener diode 10W 36V, reverse polarity |
Texas Instruments |
| 244 |
1S6036 |
Silicon power zener diode 36V |
Texas Instruments |
| 245 |
1S6036A |
Silicon power zener diode 36V, ±5% tolerance |
Texas Instruments |
| 246 |
1S6036R |
Silicon power zener diode 36V, reverse polarity |
Texas Instruments |
| 247 |
1SMB5938A |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 36 V. +-10% tolerance. |
Motorola |
| 248 |
1SMB5938B |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 36 V. +-5% tolerance. |
Motorola |
| 249 |
2N5294 |
36.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 250 |
2N5294 |
Silicon N-P-N transistor. 80V, 36W. |
General Electric Solid State |
| 251 |
2N5294 |
NPN silicon DURAWATT™ POWER transistor 36W/4A |
National Semiconductor |
| 252 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 253 |
2N5296 |
36.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 254 |
2N5296 |
Silicon N-P-N transistor. 60V, 36W. |
General Electric Solid State |
| 255 |
2N5296 |
NPN silicon DURAWATT™ POWER transistor 36W/4A |
National Semiconductor |
| 256 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 257 |
2N5298 |
36.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
| 258 |
2N5298 |
Silicon N-P-N transistor. 80V, 36W. |
General Electric Solid State |
| 259 |
2N5298 |
NPN silicon DURAWATT™ POWER transistor 36W/4A |
National Semiconductor |
| 260 |
2N5938 |
1.5 Watt hermetically sealed glass silicon zener diode 36V |
Motorola |
| 261 |
2N6080 |
V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistor |
SGS Thomson Microelectronics |
| 262 |
2N6081 |
V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistor |
SGS Thomson Microelectronics |
| 263 |
2N6082 |
V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistor |
SGS Thomson Microelectronics |
| 264 |
2N6083 |
V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistor |
SGS Thomson Microelectronics |
| 265 |
2N6084 |
V(cbo): 36V; V(ceo): 18V; V(ebo): 4V; VHF communications transistor |
SGS Thomson Microelectronics |
| 266 |
2N7002P |
60 V, 360 mA N-channel Trench MOSFET |
Nexperia |
| 267 |
2N7002P |
60 V, 360 mA N-channel Trench MOSFET |
NXP Semiconductors |
| 268 |
30KP36 |
Diode TVS Single Uni-Dir 36V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 269 |
30KP360A |
Diode TVS Single Uni-Dir 360V 30KW 2-Pin Case D-6 |
New Jersey Semiconductor |
| 270 |
30KP360CA |
Diode TVS Single Bi-Dir 360V 30KW 2-Pin Case D-6 |
New Jersey Semiconductor |
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