| No. |
Part Name |
Description |
Manufacturer |
| 241 |
APT8043SFLL |
POWER MOS 7 800V 20A 0.430 Ohm |
Advanced Power Technology |
| 242 |
APT8043SLL |
POWER MOS 7 800V 20A 0.430 Ohm |
Advanced Power Technology |
| 243 |
APT8052BFLL |
POWER MOS 7 800V 15A 0.520 Ohm |
Advanced Power Technology |
| 244 |
APT8052BLL |
POWER MOS 7 800V 15A 0.520 Ohm |
Advanced Power Technology |
| 245 |
APT8052SFLL |
POWER MOS 7 800V 15A 0.520 Ohm |
Advanced Power Technology |
| 246 |
APT8052SLL |
POWER MOS 7 800V 15A 0.520 Ohm |
Advanced Power Technology |
| 247 |
AS216-339 |
GaAs SPDT IC 7 W T/R Switch DC-2.5 GHz |
Skyworks Solutions |
| 248 |
AS216-339LF |
GaAs SPDT IC 7 W T/R Switch 300 kHz-2.5 GHz |
Skyworks Solutions |
| 249 |
AS230-348 |
GaAs SPDT IC 7 W T/R Switch DC-6 GHz |
Skyworks Solutions |
| 250 |
AT71-M4CL6007-BA1 |
AVIIVA M4 CameraLink 6144 pixels 7 um. Linescan camera 160 MHz. |
Atmel |
| 251 |
AT71-M4CL8007-BA1 |
AVIIVA M4 CameraLink 8192 pixels 7 um. Linescan camera 160 MHz. |
Atmel |
| 252 |
AT89C5131 |
USB C51-based Microcontroller with 32K Bytes Flash, 1K Byte Data EEPROM, 1280 bytes RAM, 7 USB Endpoints, TWI, SPI, UART, PCA |
Atmel |
| 253 |
BFG135 |
NPN 7 GHz wideband transistor |
NXP Semiconductors |
| 254 |
BFG197 |
NPN 7 GHz wideband transistor |
Philips |
| 255 |
BFG197/X |
NPN 7 GHz wideband transistor |
Philips |
| 256 |
BFG197/XR |
NPN 7 GHz wideband transistor |
Philips |
| 257 |
BFG591 |
NPN 7 GHz wideband transistor |
NXP Semiconductors |
| 258 |
BFG591 |
NPN 7 GHz wideband transistor |
Philips |
| 259 |
BFQ591 |
NPN 7 GHz wideband transistor |
NXP Semiconductors |
| 260 |
BFQ591 |
NPN 7 GHz wideband transistor |
Philips |
| 261 |
BFQ621 |
NPN 7 GHz wideband transistor |
Philips |
| 262 |
BU406 |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 263 |
BU406 |
400 V, 7 A, 60 W, NPN silicon power transistor |
Texas Instruments |
| 264 |
BU406H |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 265 |
BU407 |
330 V, 7 A, 60 W, NPN silicon power transistor |
Texas Instruments |
| 266 |
BU407H |
330 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 267 |
BU408 |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 268 |
C-2570 |
C/A-2570X 0.7INCH, 5 X 7 DOT MATRIX DISPLAY |
PARA Light |
| 269 |
C-2570E |
C/A-2570X 0.7INCH, 5 X 7 DOT MATRIX DISPLAY |
PARA Light |
| 270 |
C-2570G |
C/A-2570X 0.7INCH, 5 X 7 DOT MATRIX DISPLAY |
PARA Light |
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