| No. |
Part Name |
Description |
Manufacturer |
| 241 |
BC309 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 242 |
BC327 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 625mW. Collector current Ic = -800mA. |
USHA India LTD |
| 243 |
BC337 |
Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Collector-base Vcbo = 50V. Collector-emitter Vceo= 45V. Emitter-base Vebo = 5V. Collector dissipation Pc = 625mW. Collector current |
USHA India LTD |
| 244 |
BCR402 |
Light Emitting Diode (LED) Driver IC Provides Constant LED Current Independent of Supply Voltage Variation |
Infineon |
| 245 |
BF550 |
PNP Silicon RF Transistor (For common emitter amplifier stages up to 300 MHz For mixer applications in AM/FM radios and VHF TV tuners) |
Siemens |
| 246 |
BF599 |
NPN Silicon RF Transistor (Common emitter IF/RF amplifier Low feedback capacitance due to shield diffusion) |
Siemens |
| 247 |
BF840 |
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion) |
Siemens |
| 248 |
BF841 |
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion) |
Siemens |
| 249 |
BFY88 |
Silicon NPN epitaxial planar RF transistor designed for use in UHF amplifier stages, emitter grounded input stages and oscillating mixer stages |
AEG-TELEFUNKEN |
| 250 |
BIR-BL0331 |
INFRARED EMITTING DIODES |
Yellow Stone Corp |
| 251 |
BIR-BL03J4G |
INFRARED EMITTING DIODES |
Yellow Stone Corp |
| 252 |
BIR-BL03J4G-1 |
INFRARED EMITTING DIODES |
Yellow Stone Corp |
| 253 |
BIR-BL0731 |
INFRARED EMITTING DIODES |
Yellow Stone Corp |
| 254 |
BIR-BL07J4G |
INFRARED EMITTING DIODES |
Yellow Stone Corp |
| 255 |
BIR-BL07J4G-1 |
INFRARED EMITTING DIODES |
Yellow Stone Corp |
| 256 |
BIR-BM0331 |
INFRARED EMITTING DIODES |
Yellow Stone Corp |
| 257 |
BIR-BM03J4G |
INFRARED EMITTING DIODES |
Yellow Stone Corp |
| 258 |
BIR-BM03J4G-1 |
INFRARED EMITTING DIODES |
Yellow Stone Corp |
| 259 |
BIR-BM03J4Q-1 |
INFRARED EMITTING DIODES |
Yellow Stone Corp |
| 260 |
BIR-BM03J7M |
INFRARED EMITTING DIODES |
Yellow Stone Corp |
| 261 |
BIR-BM07J4Q-1 |
INFRARED EMITTING DIODES |
Yellow Stone Corp |
| 262 |
BIR-BM1331 |
INFRARED EMITTING DIODES |
Yellow Stone Corp |
| 263 |
BIR-BM13J4G |
INFRARED EMITTING DIODES |
Yellow Stone Corp |
| 264 |
BIR-BM13J4G-1 |
INFRARED EMITTING DIODES |
Yellow Stone Corp |
| 265 |
BIR-BM13J4Q-1 |
INFRARED EMITTING DIODES |
Yellow Stone Corp |
| 266 |
BIR-BM13J7M |
INFRARED EMITTING DIODES |
Yellow Stone Corp |
| 267 |
BIR-BM17J4Q-1 |
INFRARED EMITTING DIODES |
Yellow Stone Corp |
| 268 |
BIR-BN0331 |
INFRARED EMITTING DIODES |
Yellow Stone Corp |
| 269 |
BIR-BN03J4G |
INFRARED EMITTING DIODES |
Yellow Stone Corp |
| 270 |
BIR-BN03J4G-1 |
INFRARED EMITTING DIODES |
Yellow Stone Corp |
| | | |
