No. |
Part Name |
Description |
Manufacturer |
241 |
1N4446 |
Silicon signal diode - high speed switching |
SESCOSEM |
242 |
1N4446 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
243 |
1N4447 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
244 |
1N4447 |
Silicon whiskerless diode, high speed diode for computer and other applications |
Mullard |
245 |
1N4447 |
Silicon signal diode - high speed switching |
SESCOSEM |
246 |
1N4447 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
247 |
1N4448 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
248 |
1N4448 |
Silicon whiskerless diode, high speed diode for computer and other applications |
Mullard |
249 |
1N4448 |
Ultra High Speed Silicon Diode |
Philips |
250 |
1N4448 |
Silicon signal diode - high speed switching |
SESCOSEM |
251 |
1N4448 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
252 |
1N4449 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
253 |
1N4449 |
Silicon signal diode - high speed switching |
SESCOSEM |
254 |
1N4449 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
255 |
1N4454 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
256 |
1N4454 |
Silicon signal diode - high speed switching |
SESCOSEM |
257 |
1N4531 |
Silicon signal diode - high speed switching |
SESCOSEM |
258 |
1N459 |
Glass passivated silicon switching diode with high breaking voltage, marking using plain text or color rings yellow-green-white |
Texas Instruments |
259 |
1N461A |
25 V, 500 mW general purpose high conductance diode |
BKC International Electronics |
260 |
1N461A |
General purpose high conductance diode. Working inverse voltage 25V. |
Fairchild Semiconductor |
261 |
1N462A |
60 V, 500 mW general purpose high conductance diode |
BKC International Electronics |
262 |
1N462A |
General purpose high conductance diode. Working inverse voltage 60V. |
Fairchild Semiconductor |
263 |
1N463A |
175 V, 500 mW general purpose high conductance diode |
BKC International Electronics |
264 |
1N463A |
General purpose high conductance diode. Working inverse voltage 175V. |
Fairchild Semiconductor |
265 |
1N464A |
125 V, 500 mW general purpose high conductance diode |
BKC International Electronics |
266 |
1N4719 |
3A Silicon high-conductance rectifier diode |
Motorola |
267 |
1N4720 |
3A Silicon high-conductance rectifier diode |
Motorola |
268 |
1N4721 |
3A Silicon high-conductance rectifier diode |
Motorola |
269 |
1N4722 |
3A Silicon high-conductance rectifier diode |
Motorola |
270 |
1N4723 |
3A Silicon high-conductance rectifier diode |
Motorola |
| | | |