| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2SC5661T2L |
NPN High frequency Transistor |
ROHM |
| 242 |
2SC5662T2L |
NPN High frequency Transistor |
ROHM |
| 243 |
2SC5829 |
Small-signal device - Small-signal transistor - High-Speed Switch�VCO and High Freq. |
Panasonic |
| 244 |
2SC594 |
Silicon NPN epitaxial high frequency transistor |
TOSHIBA |
| 245 |
2SC784 |
Silicon NPN epitaxial planar transistor, FM Tuner and High Frequency amplifier applications |
TOSHIBA |
| 246 |
2SC785 |
Silicon NPN epitaxial planar transistor, FM Tuner and High Frequency amplifier applications |
TOSHIBA |
| 247 |
2SC815 |
LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLAR |
USHA India LTD |
| 248 |
2SC941TM |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 249 |
2SC941TM |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 250 |
2SC942 |
NPN EPITAXIAL TYPE (HIGH/ AM/ AM HIGH FREQUENCY AMPLIFIER CONVERTER APPLICATIONS) |
TOSHIBA |
| 251 |
2SC942TM |
NPN EPITAXIAL TYPE (HIGH/ AM/ AM HIGH FREQUENCY AMPLIFIER CONVERTER APPLICATIONS) |
TOSHIBA |
| 252 |
2SC945 |
Transistor. Audio frequency amplifier high frequency osc. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 50V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 150mA. |
USHA India LTD |
| 253 |
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification |
Panasonic |
| 254 |
2SK1875 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 255 |
2SK1875 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 256 |
2SK709 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 257 |
2SK709 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 258 |
2SK710 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 259 |
2SK710 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 260 |
2SK711 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 261 |
2SK711 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 262 |
3SK135A-T1 |
For UHF TV tuner high frequency amplification |
NEC |
| 263 |
3SK135A-T2 |
For UHF TV tuner high frequency amplification |
NEC |
| 264 |
3SK177-T1 |
For UHF TV tuner high frequency amplification |
NEC |
| 265 |
3SK177-T2 |
For UHF TV tuner high frequency amplification |
NEC |
| 266 |
3SK206-T1 |
UHF band high frequency amplification |
NEC |
| 267 |
3SK206-T2 |
UHF band high frequency amplification |
NEC |
| 268 |
3SK223-T1 |
UHF band high frequency amplification |
NEC |
| 269 |
3SK223-T2 |
UHF band high frequency amplification |
NEC |
| 270 |
550D |
Solid Tantalum Capacitors, Solid-Electrolyte TANTALEX®, for High Frequency Power Supplies, Hermetically Sealed, Low ESR, Axial Leads |
Vishay |
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