| No. |
Part Name |
Description |
Manufacturer |
| 241 |
F5E1 |
AIGAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 242 |
F5E2 |
AlGaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
| 243 |
F5E2 |
AIGAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 244 |
F5E3 |
AlGaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
| 245 |
F5E3 |
AIGAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 246 |
F5F1 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 247 |
F5G1 |
AIGAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 248 |
FDC37C665IR |
3/5 Volt Advanced High-Performance Multi-Mode Parallel Port Super I/O Floppy Disk Controller with Infranred Support |
SMSC Corporation |
| 249 |
FDC37C669 |
PC 98/99 Compliant Super I/O Floppy Disk Controller with Infrared Support |
Standard Microsystems |
| 250 |
FDC37C669FR |
Super I/O Floppy Disk Controller with Fast Infrared Support |
Standard Microsystems |
| 251 |
FDC37M60X |
ENHANCED SUPER I/O CONTROLLER WITH INFRARED SUPPORT |
SMSC Corporation |
| 252 |
FDC37M60X |
Enhanced Super I/O Controller with Infrared Support |
Standard Microsystems |
| 253 |
FDC37N3869 |
3.3V SUPER I/O CONTROLLER WITH INFRARED SUPPORT |
SMSC Corporation |
| 254 |
FDC37N3869-MD |
3.3V SUPER I/O CONTROLLER WITH INFRARED SUPPORT |
SMSC Corporation |
| 255 |
FDC37N769 |
3.3V SUPER I/O CONTROLLER WITH INFRARED SUPPORT FOR PORTABLE APPLICATIONS |
SMSC Corporation |
| 256 |
FDC37N869 |
5V and 3.3V Super I/O Controller with Infrared Support for Portable Applications |
Standard Microsystems |
| 257 |
FDC37N869TQFP |
5V and 3.3V Super I/O Controller with Infrared Support for Portable Applications |
SMSC Corporation |
| 258 |
FDC87W21 |
Power I/O Controller with Fast Infrared Support |
Standard Microsystems |
| 259 |
G3VM-351G |
Slim, 2.1-mm High Relay Incorporating a MOS FET Optically Coupled with an Infrared LED in a Miniature, Flat SOP Package |
OMRON Electronics |
| 260 |
G7150-16 |
Active area: 0.45x1mm; spectral response range:0.9-1.7um; reverse voltage:5V; InGaAs PIN photodiode array: 16-element array. For near infrared (NIR) spectrophotometer |
Hamamatsu Corporation |
| 261 |
G7751-01 |
Active area: 0.6mm; external input voltage:+-18V; infrared detector module with preamplifier: high sensitivity module of easy-to-use. For infrared detection |
Hamamatsu Corporation |
| 262 |
G7751-01 |
Active area: 0.6mm; external input voltage:+-18V; infrared detector module with preamplifier: high sensitivity module of easy-to-use. For infrared detection |
Hamamatsu Corporation |
| 263 |
GE3009 |
Photon coupled isolator. GaAs infrared emitting diode & light activated triac driver. |
General Electric Solid State |
| 264 |
GE3010 |
Photon coupled isolator. GaAs infrared emitting diode & light activated triac driver. |
General Electric Solid State |
| 265 |
GE3011 |
Photon coupled isolator. GaAs infrared emitting diode & light activated triac driver. |
General Electric Solid State |
| 266 |
GE3012 |
Photon coupled isolator. GaAs infrared emitting diode & light activated triac driver. |
General Electric Solid State |
| 267 |
GEPS2001 |
Photon coupled isolator. GaAs infrared emitting diode & NPN silicon photo-transistor. |
General Electric Solid State |
| 268 |
GL1F20 |
Infrared Communication (IrDA1.0 Compatible) InfraredEmitting Diode |
SHARP |
| 269 |
GL360 |
3.2mm RESIN MOLD Type Infrared Light Emltting Diode |
SHARP |
| 270 |
GL380 |
High Output, o 3mm Resin Diode Mold Type Infrared Emitting |
SHARP |
| | | |
