No. |
Part Name |
Description |
Manufacturer |
241 |
2N5546JANTX |
Monolithic N-Channel JFET Duals |
Vishay |
242 |
2N5546JANTXV |
Monolithic N-Channel JFET Duals |
Vishay |
243 |
2N5547JANTX |
Monolithic N-Channel JFET Duals |
Vishay |
244 |
2N5547JANTXV |
Monolithic N-Channel JFET Duals |
Vishay |
245 |
2N5555-D |
JFET Switching N-Channel - Depletion |
ON Semiconductor |
246 |
2N5556 |
Silicon N-CHANNEL Junction Field-Effect Transistor Type A |
Motorola |
247 |
2N5557 |
Silicon N-CHANNEL Junction Field-Effect Transistor Type A |
Motorola |
248 |
2N5558 |
Silicon N-CHANNEL Junction Field-Effect Transistor Type A |
Motorola |
249 |
2N5564 |
Trans JFET N-CH 6-Pin TO-71 |
New Jersey Semiconductor |
250 |
2N5565 |
Trans JFET N-CH 6-Pin TO-71 |
New Jersey Semiconductor |
251 |
2N5566 |
Trans JFET N-CH 6-Pin TO-71 |
New Jersey Semiconductor |
252 |
2N5629 |
Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. |
General Electric Solid State |
253 |
2N5630 |
Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. |
General Electric Solid State |
254 |
2N5631 |
Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. |
General Electric Solid State |
255 |
2N5638-D |
JFET Chopper Transistors N-Channel - Depletion |
ON Semiconductor |
256 |
2N5653 |
Trans JFET N-CH Si 3-Pin TO-92 |
New Jersey Semiconductor |
257 |
2N5653A |
Trans JFET N-CH Si 3-Pin TO-92 |
New Jersey Semiconductor |
258 |
2N5654 |
Trans JFET N-CH Si 3-Pin TO-92 |
New Jersey Semiconductor |
259 |
2N5668 |
DUAL N-CHANNEL FETS |
New Jersey Semiconductor |
260 |
2N5669 |
DUAL N-CHANNEL FETS |
New Jersey Semiconductor |
261 |
2N5671 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
262 |
2N5672 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
263 |
2N5784 |
Silicon N-P-N epitaxial-base transistor. 80V, 10W. |
General Electric Solid State |
264 |
2N5785 |
Silicon N-P-N epitaxial-base transistor. 65V, 10W. |
General Electric Solid State |
265 |
2N5786 |
Silicon N-P-N epitaxial-base transistor. 45V, 10W. |
General Electric Solid State |
266 |
2N5838 |
High-voltage, high-power silicon N-P-N power transistor. |
General Electric Solid State |
267 |
2N5838 |
HIGH-VOLTAGE, HIGH-POWER SILICON N-P-N POWER TRANSISTORS |
Motorola |
268 |
2N5839 |
High-voltage, high-power silicon N-P-N power transistor. |
General Electric Solid State |
269 |
2N5839 |
HIGH-VOLTAGE, HIGH-POWER SILICON N-P-N POWER TRANSISTORS |
Motorola |
270 |
2N5840 |
High-voltage, high-power silicon N-P-N power transistor. |
General Electric Solid State |
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