No. |
Part Name |
Description |
Manufacturer |
241 |
IPF09N03LA |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 25V, Reverse D-PAK, RDSon = 8.9mOhm, 50A, LL |
Infineon |
242 |
IPF13N03LA |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 25V, Reverse D-PAK, RDSon = 13.3mOhm, 30A, LL |
Infineon |
243 |
IPP03N03LA |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 25V, TO220, RDSon = 3.0mOhm, 80A, LL |
Infineon |
244 |
IPP04N03L |
OptiMOS Power MOSFET, 30V, TO-220, RDSon = 4.3mOhm, 80A, LL |
Infineon |
245 |
IPP04N03LA |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 25V, TO220, RDSon = 4.2mOhm, 80A, LL |
Infineon |
246 |
IPP05N03L |
OptiMOS Power MOSFET, 30V, TO-220, RDSon = 5.2mOhm, 80A, LL |
Infineon |
247 |
IPP05N03LA |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 25V, TO220, RDSon = 5.2mOhm, 80A, LL |
Infineon |
248 |
IPP06N03LA |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 25V, TO220, RDSon = 6.2mOhm, 50A, LL |
Infineon |
249 |
IPP07N03L |
OptiMOS Power MOSFET, 30V, TO-220, RDSon = 6.2mOhm, 80A, LL |
Infineon |
250 |
IPP09N03LA |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 25V, TO220, RDSon = 8.9mOhm, 50A, LL |
Infineon |
251 |
IPP10N03L |
OptiMOS Power MOSFET, 30V, TO-220, RDSon = 9.2mOhm, 73A, LL |
Infineon |
252 |
IPP14N03LA |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 25V, TO220, RDSon = 13.9mOhm, 30A, LL |
Infineon |
253 |
IPP15N03L |
OptiMOS Power MOSFET, 30V, TO-220, RDSon = 12.9mOhm, 42A, LL |
Infineon |
254 |
IPU04N03LA |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 25V, TO251, RDSon = 4.0mOhm, 50A, LL |
Infineon |
255 |
IPU05N03LA |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 25V, TO251, RDSon = 5.3mOhm, 50A, LL |
Infineon |
256 |
IPU06N03LA |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 25V, TO251, RDSon = 5.9mOhm, 50A, LL |
Infineon |
257 |
IPU07N03L |
OptiMOS Power MOSFET, 30V, TO251, RDSon = 6.8mOhm, 30A, LL |
Infineon |
258 |
IPU09N03LA |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 25V, TO251, RDSon = 8.8mOhm, 50A, LL |
Infineon |
259 |
IPU12N03L |
OptiMOS Power MOSFET, 30V, TO251, RDSon = 10.4mOhm, 30A, LL |
Infineon |
260 |
IPU13N03LA |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 25V, TO251, RDSon = 13.0mOhm, 30A, LL |
Infineon |
261 |
IPU14N03L |
OptiMOS Power MOSFET, 30V, TO251, RDSon = 14.4mOhm, 30A, LL |
Infineon |
262 |
IR3101 |
Intelligent Power Module. Gate Driver IC integrated with a half bridge FredFET Designed for sub 250W Motor Drive applications in a 9-Lead SIP. RDSon of 1.0 Ohm |
International Rectifier |
263 |
IRC |
Power MOSFET(Vdss=200V/ Rds(on)=0.40ohm/ Id=9.0A) |
International Rectifier |
264 |
IRC503 |
Power MOSFET(Vdss=100V/ Rds(on)=0.16ohm/ Id=14A) |
International Rectifier |
265 |
IRF1704 |
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A��) |
International Rectifier |
266 |
IRF1730G |
Power MOSFET(Vdss=400V/ Rds(on)=1.0ohm/ Id=3.7A) |
International Rectifier |
267 |
IRF520L |
Power MOSFET(Vdss=100V/ Rds(on)=0.20ohm/ Id=9.7A) |
International Rectifier |
268 |
IRF520NL |
HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A |
International Rectifier |
269 |
IRF530L |
Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A) |
International Rectifier |
270 |
IRF830L |
HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A |
International Rectifier |
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