No. |
Part Name |
Description |
Manufacturer |
241 |
2N3858A |
SILICON TRANSISTORS |
General Electric Solid State |
242 |
2N3859 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
243 |
2N3859A |
Planar epitaxial passivated NPN silicon transistor. 60V, 100mA. |
General Electric Solid State |
244 |
2N3860 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
245 |
2N3866 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
246 |
2N3866 |
Silicon NPN Overlay RF Power Transistor |
RCA Solid State |
247 |
2N3870 |
35A silicon controlled rectifier. Vrsom(non-rep) 150V. |
General Electric Solid State |
248 |
2N3870 |
35A Silicon Controlled Rectifier (reverse-blocking triode thyristor) |
RCA Solid State |
249 |
2N3871 |
35A silicon controlled rectifier. Vrsom(non-rep) 330V. |
General Electric Solid State |
250 |
2N3871 |
35A Silicon Controlled Rectifier (reverse-blocking triode thyristor) |
RCA Solid State |
251 |
2N3872 |
35A silicon controlled rectifier. Vrsom(non-rep) 660V. |
General Electric Solid State |
252 |
2N3872 |
35A Silicon Controlled Rectifier (reverse-blocking triode thyristor) |
RCA Solid State |
253 |
2N3873 |
35A silicon controlled rectifier. Vrsom(non-rep) 700V. |
General Electric Solid State |
254 |
2N3873 |
35A Silicon Controlled Rectifier (reverse-blocking triode thyristor) |
RCA Solid State |
255 |
2N3878 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
256 |
2N3879 |
High speed, epitaxial collector silicon N-P-N planar transistor. |
General Electric Solid State |
257 |
2N3896 |
35A silicon controlled rectifier. Vrsom(non-rep) 150V. |
General Electric Solid State |
258 |
2N3896 |
35A Silicon Controlled Rectifier (reverse-blocking triode thyristor) |
RCA Solid State |
259 |
2N3897 |
35A silicon controlled rectifier. Vrsom(non-rep) 330V. |
General Electric Solid State |
260 |
2N3897 |
35A Silicon Controlled Rectifier (reverse-blocking triode thyristor) |
RCA Solid State |
261 |
2N3898 |
35A silicon controlled rectifier. Vrsom(non-rep) 660V. |
General Electric Solid State |
262 |
2N3898 |
35A Silicon Controlled Rectifier (reverse-blocking triode thyristor) |
RCA Solid State |
263 |
2N3899 |
35A silicon controlled rectifier. Vrsom(non-rep) 700V. |
General Electric Solid State |
264 |
2N3899 |
35A Silicon Controlled Rectifier (reverse-blocking triode thyristor) |
RCA Solid State |
265 |
2N3903 |
Planar epitaxial NPN silicon transistor. 40V, 200mA. |
General Electric Solid State |
266 |
2N3904 |
Planar epitaxial NPN silicon transistor. 40V, 200mA. |
General Electric Solid State |
267 |
2N3905 |
Planar epitaxial PNP silicon transistor. -40V, 200mA. |
General Electric Solid State |
268 |
2N3906 |
Planar epitaxial PNP silicon transistor. -40V, 200mA. |
General Electric Solid State |
269 |
2N4012 |
High-Power Silicon NPN Overlay RF Transistor |
RCA Solid State |
270 |
2N4036 |
Medium power silicon N-P-N planar transistor. |
General Electric Solid State |
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