| No. |
Part Name |
Description |
Manufacturer |
| 241 |
269-B-280-14XX-C |
Pump laser module with fiber grating. Available with fiber grating for wavelength stability (1420 nm - 1510 nm). Operatig power 280 mW. Nonisolated,RMF. Connector FC/APC. |
Agere Systems |
| 242 |
2N3055 |
Diffused NPN silicon LF power transistor with very good second-breakdown properties, for high-power LF power amplifiers, stabilization circuits and power switch applications |
ITT Semiconductors |
| 243 |
2NZ70 |
Zener diode for stabilisation |
Tesla Elektronicke |
| 244 |
2SC935 |
Silicon NPN Triple Diffused Transistor, JEDEC TO-3, intended for use in Transless TV Stabilized Power Supply |
Hitachi Semiconductor |
| 245 |
3NZ70 |
Zener diode for stabilisation |
Tesla Elektronicke |
| 246 |
4NZ70 |
Zener diode for stabilisation |
Tesla Elektronicke |
| 247 |
5M15N |
Silicon Epitaxial Planar Zener Diode for Stabilizer |
Renesas |
| 248 |
5NZ70 |
Zener diode for stabilisation |
Tesla Elektronicke |
| 249 |
6NZ70 |
Zener diode for stabilisation |
Tesla Elektronicke |
| 250 |
723C |
VOLTAGE STABILIZATION CIRCUIT |
VALVO |
| 251 |
7NZ70 |
Zener diode for stabilisation |
Tesla Elektronicke |
| 252 |
8NZ70 |
Zener diode for stabilisation |
Tesla Elektronicke |
| 253 |
AB-055 |
IMPROVE OPA541 CURRENT-LIMIT STABILITY |
Burr Brown |
| 254 |
ADXRS646 |
High Stability, Low Noise Vibration Rejecting Yaw Rate Gyroscope Data Sheet (Rev B, 01/2014) |
Analog Devices |
| 255 |
ADXRS646-EP |
High Stability, Low Noise Vibration Rejecting Yaw Rate Gyroscope Data Sheet (Rev 0, 10/2012) |
Analog Devices |
| 256 |
AN-460 |
Using transient response to determine operational amplifier stability - Application Note |
Motorola |
| 257 |
AND8199 |
THERMAL STABILITY OF MOSFETS |
ON Semiconductor |
| 258 |
BA314 |
Low-voltage stabistor |
Philips |
| 259 |
BA315 |
Low-voltage stabistor |
Philips |
| 260 |
BA723 |
βA723 Voltage stabilizer |
IPRS Baneasa |
| 261 |
BA723C |
βA723C Voltage stabilizer |
IPRS Baneasa |
| 262 |
BAP811 |
Dioda stabilizacyjna |
Ultra CEMI |
| 263 |
BAP812 |
Dioda stabilizacyjna |
Ultra CEMI |
| 264 |
BAS17 |
Low-voltage stabistor |
Nexperia |
| 265 |
BAS17 |
Low-voltage stabistor |
NXP Semiconductors |
| 266 |
BAS17 |
Low-voltage stabistor |
Philips |
| 267 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 268 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 269 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 270 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
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