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Datasheets for , 10

Datasheets found :: 11119
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No. Part Name Description Manufacturer
241 2N5249 Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. General Electric Solid State
242 2N5249A Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. General Electric Solid State
243 2N5781 Silicon P-N-P epitaxial-base transistor. -80V, 10W. General Electric Solid State
244 2N5782 Silicon P-N-P epitaxial-base transistor. -65V, 10W. General Electric Solid State
245 2N5783 Silicon P-N-P epitaxial-base transistor. -45V, 10W. General Electric Solid State
246 2N5784 Silicon N-P-N epitaxial-base transistor. 80V, 10W. General Electric Solid State
247 2N5785 Silicon N-P-N epitaxial-base transistor. 65V, 10W. General Electric Solid State
248 2N5786 Silicon N-P-N epitaxial-base transistor. 45V, 10W. General Electric Solid State
249 2N6036 40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 100 hFE. Continental Device India Limited
250 2N6076 PNP silicon transistor. 25V, 100mA. General Electric Solid State
251 2N6101 75.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 10.000A Ic, 20 - 80 hFE. Continental Device India Limited
252 2N6121 40.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 10 hFE. Continental Device India Limited
253 2N6171 SCRs 35 Ampere RMS, 100V Motorola
254 2N6188 100 V, 10 A high speed PNP transistor Solid State Devices Inc
255 2N6189 100 V, 10 A high speed PNP transistor Solid State Devices Inc
256 2N6198 12 W, 28 V, 100-200 MHz, VHF communication Acrian
257 2N6199 25 W, 28 V, 100-200 MHz, VHF communication Acrian
258 2N6354 120V, 10A, 140W silicon N-P-N planar transistor. General Electric Solid State
259 2N6395 Thyristor, 12 amperes, 100 volt Teccor Electronics
260 2N6401 SCRs 16 Ampere RMS, 100V Motorola
261 2N6401 Thyristor, 16 amperes, 100 volt Teccor Electronics
262 2N6505 SCRs 25 Ampere RMS, 100V Motorola
263 2N6505 Thyristor, 25 amperes, 100 volt Teccor Electronics
264 2N6740 100.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 8.000A Ic, 10 - 40 hFE. Continental Device India Limited
265 2N6782 N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. General Electric Solid State
266 2N6788 N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. General Electric Solid State
267 2N6796 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET Fairchild Semiconductor
268 2N6796 N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. General Electric Solid State
269 2N930A 0.500W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.030A Ic, 100 - 600 hFE. Continental Device India Limited
270 2PA1774QMB 40 V, 100 mA PNP general-purpose transistors Nexperia


Datasheets found :: 11119
Page: | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 |



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