| No. |
Part Name |
Description |
Manufacturer |
| 241 |
28LV256SI-6 |
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 242 |
28LV256SM-3 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 243 |
28LV256SM-4 |
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 244 |
28LV256SM-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 245 |
28LV256SM-6 |
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 246 |
28LV256TC-3 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 247 |
28LV256TC-4 |
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 248 |
28LV256TC-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 249 |
28LV256TC-6 |
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 250 |
28LV256TI-3 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 251 |
28LV256TI-4 |
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 252 |
28LV256TI-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 253 |
28LV256TI-6 |
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 254 |
28LV256TM-3 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 255 |
28LV256TM-4 |
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 256 |
28LV256TM-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 257 |
28LV256TM-6 |
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 258 |
2N1595 |
Industrial-type, low-current silicon controlled rectifier in a three-lead package 1.6A |
Motorola |
| 259 |
2N1596 |
Industrial-type, low-current silicon controlled rectifier in a three-lead package 1.6A |
Motorola |
| 260 |
2N1597 |
Industrial-type, low-current silicon controlled rectifier in a three-lead package 1.6A |
Motorola |
| 261 |
2N1598 |
Industrial-type, low-current silicon controlled rectifier in a three-lead package 1.6A |
Motorola |
| 262 |
2N1599 |
Industrial-type, low-current silicon controlled rectifier in a three-lead package 1.6A |
Motorola |
| 263 |
2N1708 |
NPN Silicon transistor designed for very high-speed, low-power saturated switching applications for computers in military and industrial service |
Motorola |
| 264 |
2N1751 |
PNP Germanium power transistor, low saturation voltage |
Motorola |
| 265 |
2N1924 |
PNP germanium transistor for general purpose, low frequency applications |
Motorola |
| 266 |
2N1925 |
PNP germanium transistor for general purpose, low frequency applications |
Motorola |
| 267 |
2N1926 |
PNP germanium transistor for general purpose, low frequency applications |
Motorola |
| 268 |
2N2217 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
| 269 |
2N2217 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
| 270 |
2N2218 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
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