No. |
Part Name |
Description |
Manufacturer |
241 |
M28F512-10C1 |
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
ST Microelectronics |
242 |
M4A3-128/64-10CAC |
High Performance E 2 CMOS In-System Programmable Logic |
Lattice Semiconductor |
243 |
M4A3-128/64-10CAI |
High Performance E 2 CMOS In-System Programmable Logic |
Lattice Semiconductor |
244 |
M87C257-10C1TR |
ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM |
ST Microelectronics |
245 |
M87C257-10C1X |
ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM |
ST Microelectronics |
246 |
M87C257-10C3TR |
ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM |
ST Microelectronics |
247 |
M87C257-10C3X |
ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM |
ST Microelectronics |
248 |
M87C257-10C6TR |
ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM |
ST Microelectronics |
249 |
M87C257-10C6X |
ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM |
ST Microelectronics |
250 |
M87C257-10C7TR |
ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM |
ST Microelectronics |
251 |
M87C257-10C7X |
ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM |
ST Microelectronics |
252 |
MPT-10C |
TRANSIENT ABSORPTION ZENER |
Microsemi |
253 |
MPTE-10C |
Transient Voltage Suppressor |
Microsemi |
254 |
OP-10CY |
DUAL MATCHED INSTRUMENTATION OPERATIONAL AMPLIFIER |
Analog Devices |
255 |
PDU1016H-10C4 |
4-BIT, ECL-interfaced programmable delay line |
Data Delay Devices Inc |
256 |
PDU10256H-10C5 |
8-BIT, ECL-interfaced programmable delay line |
Data Delay Devices Inc |
257 |
PDU1032H-10C4 |
Delay 10 +/-1.5 ns, 5-BIT, ECL-interfaced programmable delay line |
Data Delay Devices Inc |
258 |
PDU108H-10C3 |
Delay 10 +/-1 ns, 3-BIT, ECL-interfaced programmable delay line |
Data Delay Devices Inc |
259 |
PM200-10C |
Medical switching power supply. Maximum output power 200 W. Output #1: Vnom 5V, Imin 3.0A, Imax 40.0A. |
International Power Sources |
260 |
PPG312F-10C5 |
10 +/-2 ns, 12-BIT, programmable pulse generator |
Data Delay Devices Inc |
261 |
PU200-10C |
Switching power supply, 200W. Output #1: Vnom 5V, Imin 3A, Imax 40A. |
International Power Sources |
262 |
SUD50N03-10CP |
N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized |
Vishay |
263 |
SUY50N03-10CP |
N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized |
Vishay |
264 |
T14L1024N-10C |
128K X 8 HIGH SPEED CMOS STATIC RAM |
Taiwan Memory Technology |
265 |
TGL41-10C |
Transient Voltage Suppressor |
Microsemi |
266 |
TGL41-10CA |
Transient Voltage Suppressor |
Microsemi |
267 |
TIBPAL16L8-10C |
HIGH-PERFORMANCE IMPACT-X E PAL CIRCUITS |
Texas Instruments |
268 |
TIBPAL16L8-10CFN |
10C - Higperformance Impact-X<TM> PAL<R> Circuits |
Texas Instruments |
269 |
TIBPAL16L8-10CFN |
10C - Higperformance Impact-X<TM> PAL<R> Circuits |
Texas Instruments |
270 |
TIBPAL16L8-10CFN |
10C - Higperformance Impact-X<TM> PAL<R> Circuits |
Texas Instruments |
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