| No. |
Part Name |
Description |
Manufacturer |
| 241 |
1N3088 |
400V 150A Std. Recovery Diode in a DO-205AC (DO-30)package |
International Rectifier |
| 242 |
1N3088 |
Diode Switching 400V 150A 2-Pin DO-30 |
New Jersey Semiconductor |
| 243 |
1N3088R |
400V 150A Std. Recovery Diode in a DO-205AC (DO-30)package |
International Rectifier |
| 244 |
1N3089 |
500V 150A Std. Recovery Diode in a DO-205AC (DO-30)package |
International Rectifier |
| 245 |
1N3089 |
Diode Switching 500V 150A 2-Pin DO-30 |
New Jersey Semiconductor |
| 246 |
1N3090 |
600V 150A Std. Recovery Diode in a DO-205AC (DO-30)package |
International Rectifier |
| 247 |
1N3091 |
800V 150A Std. Recovery Diode in a DO-205AC (DO-30)package |
International Rectifier |
| 248 |
1N3091R |
800V 150A Std. Recovery Diode in a DO-205AC (DO-30)package |
International Rectifier |
| 249 |
1N3092 |
1000V 150A Std. Recovery Diode in a DO-205AC (DO-30)package |
International Rectifier |
| 250 |
1N3092 |
Diode Switching 1KV 150A 2-Pin DO-30 |
New Jersey Semiconductor |
| 251 |
1N3093 |
Diode Switching 1KV 150A 2-Pin DO-30 |
New Jersey Semiconductor |
| 252 |
1N3094 |
Diode Switching 1KV 150A 2-Pin DO-30 |
New Jersey Semiconductor |
| 253 |
1N3097 |
Diode Switching 1KV 150A 2-Pin DO-30 |
New Jersey Semiconductor |
| 254 |
1N3098 |
Diode Switching 1KV 150A 2-Pin DO-30 |
New Jersey Semiconductor |
| 255 |
1N3111 |
50V 150A Std. Recovery Diode in a DO-205AC (DO-30)package |
International Rectifier |
| 256 |
1N3111 |
Diode Switching 50V 150A 2-Pin DO-30 |
New Jersey Semiconductor |
| 257 |
1N5546 |
Nom zener voltage:33.0V; measured from 1000-3000Hz; low voltage avalanche zener diode; high performance: low noise, low leakage |
Knox Semiconductor Inc |
| 258 |
1N5940B |
3 Watt DO-41 Surmetic-30 Zener Voltage Regulators |
ON Semiconductor |
| 259 |
1N5940BRL |
3 Watt DO-41 Surmetic-30 Zener Voltage Regulators |
ON Semiconductor |
| 260 |
1S2076 |
Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-35V, VR=-30V |
Hitachi Semiconductor |
| 261 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 262 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 263 |
200HF120PV |
1200V 200A Std. Recovery Diode in a DO-205AC (DO-30)package |
International Rectifier |
| 264 |
200HF40PV |
400V 200A Std. Recovery Diode in a DO-205AC (DO-30)package |
International Rectifier |
| 265 |
200HF80PV |
800V 200A Std. Recovery Diode in a DO-205AC (DO-30)package |
International Rectifier |
| 266 |
2020-1500 |
Delay 1500 +/-30 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
| 267 |
2020-300 |
Delay 300 +/-10 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
| 268 |
2020-4015-30 |
1-2 GHz, directional couplers mini, octave bandwidth |
MA-Com |
| 269 |
2020-4016-30 |
2-4 GHz, directional couplers mini, octave bandwidth |
MA-Com |
| 270 |
2020-4018-30 |
7-12.4 GHz, directional couplers mini, octave bandwidth |
MA-Com |
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