| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2211-600D |
data delay devices |
Data Delay Devices Inc |
| 242 |
2211-600G |
data delay devices |
Data Delay Devices Inc |
| 243 |
2211-600G |
FIXED DIP DELAY LINE |
Data Delay Devices Inc |
| 244 |
2211-60A |
FIXED DIP DELAY LINE |
Data Delay Devices Inc |
| 245 |
2211-60A |
data delay devices |
Data Delay Devices Inc |
| 246 |
2211-60B |
FIXED DIP DELAY LINE |
Data Delay Devices Inc |
| 247 |
2211-60B |
data delay devices |
Data Delay Devices Inc |
| 248 |
2214-600C |
data delay devices |
Data Delay Devices Inc |
| 249 |
2214-600C |
20-TAP DIP DELAY LINE TD/TR = 10 (SERIES 2214) |
Data Delay Devices Inc |
| 250 |
2214-600D |
20-TAP DIP DELAY LINE TD/TR = 10 (SERIES 2214) |
Data Delay Devices Inc |
| 251 |
2214-600D |
data delay devices |
Data Delay Devices Inc |
| 252 |
2214-600G |
20-TAP DIP DELAY LINE TD/TR = 10 (SERIES 2214) |
Data Delay Devices Inc |
| 253 |
2214-600G |
data delay devices |
Data Delay Devices Inc |
| 254 |
2214-60A |
20-TAP DIP DELAY LINE TD/TR = 10 (SERIES 2214) |
Data Delay Devices Inc |
| 255 |
2214-60A |
data delay devices |
Data Delay Devices Inc |
| 256 |
2214-60B |
20-TAP DIP DELAY LINE TD/TR = 10 (SERIES 2214) |
Data Delay Devices Inc |
| 257 |
2214-60B |
data delay devices |
Data Delay Devices Inc |
| 258 |
299-91-608-10-002 |
Dual-in-line sockets / right angle version Closed frame Solder tail |
Precid-Dip Durtal |
| 259 |
299-93-608-10-002 |
Dual-in-line sockets / right angle version Closed frame Solder tail |
Precid-Dip Durtal |
| 260 |
2CK48 |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 35-60-90V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
| 261 |
2CK48A |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 35-60-90V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
| 262 |
2CK48B |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 35-60-90V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
| 263 |
2N2876 |
Trans GP BJT NPN 60V 2.5A 3-Pin TO-60 |
New Jersey Semiconductor |
| 264 |
2N3375 |
Trans GP BJT NPN 40V 1.5A 3-Pin TO-60 |
New Jersey Semiconductor |
| 265 |
2N3632 |
Trans GP BJT NPN 40V 3A 3-Pin TO-60 |
New Jersey Semiconductor |
| 266 |
2N3733 |
Trans GP BJT NPN 40V 3A 3-Pin TO-60 |
New Jersey Semiconductor |
| 267 |
2N3791 |
Silicon P-N-P epitaxial-base high power transistor. -60V, 150W. |
General Electric Solid State |
| 268 |
2N3791 |
-60 V, -10 A, 150 W, PNP silicon power transistor |
Texas Instruments |
| 269 |
2N3858-60 |
SILICON TRANSISTORS |
General Electric Solid State |
| 270 |
2N4399 |
-60 V, -30 A, 200 W, PNP silicon power transistor |
Texas Instruments |
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