| No. |
Part Name |
Description |
Manufacturer |
| 241 |
S1A0900X01-S0B0 |
AM/FM TUNER + MPX |
Samsung Electronic |
| 242 |
S1A0905-S0B0 |
RDS DEMODULATOR IC |
Samsung Electronic |
| 243 |
S1A2209A01-S0B0 |
DUAL LOW VOLTAGE POWER AMP |
Samsung Electronic |
| 244 |
S1A2272A01-S0B0 |
FM NOISE CANCELLER |
Samsung Electronic |
| 245 |
S1A2297X01-S0B0 |
AM/FM TUNER |
Samsung Electronic |
| 246 |
S1P2655A01-S0B0 |
Linear integrated circuit. Input level DTL, TTL, PMOS, CMOS |
Samsung Electronic |
| 247 |
S1P2655A02-S0B0 |
Linear integrated circuit. Input level PMOS |
Samsung Electronic |
| 248 |
S1P2655A03-S0B0 |
Linear integrated circuit. Input level TTL, CMOS |
Samsung Electronic |
| 249 |
S1P2655A04-S0B0 |
Linear integrated circuit. Input level CMOS, PMOS |
Samsung Electronic |
| 250 |
S1P2655A05-S0B0 |
Linear integrated circuit. Input level TTL |
Samsung Electronic |
| 251 |
S1T3361D01-S0B0 |
LOW VOLTAGE/POWER NARROW BAND FM IF |
Samsung Electronic |
| 252 |
S1T8531X01-S0B0 |
WIDEBAND FM/FSK IF RECEIVER |
Samsung Electronic |
| 253 |
S1T8602B01-S0B0 |
LOW VOLTAGE AUDIO AMPLIFIER |
Samsung Electronic |
| 254 |
S1T8603X-S0B0 |
UNIVERSAL SPEECH NETWORK |
Samsung Electronic |
| 255 |
S1T8603X01-S0B0 |
Universal speech network |
Samsung Electronic |
| 256 |
S5T0167X01-S0B0 |
DTMF DIALER FOR BINARY DATA-IN |
Samsung Electronic |
| 257 |
S5T3170X01-S0B0 |
LOW POWER DTMF RECEIVER |
Samsung Electronic |
| 258 |
S5T8554B01-S0B0 |
1 CHIP CODEC |
Samsung Electronic |
| 259 |
S5T8554B03-S0B0 |
CODEC FOR DIGITAL ANSWERING PHONE |
Samsung Electronic |
| 260 |
S5T8557B01-S0B0 |
1 CHIP CODEC |
Samsung Electronic |
| 261 |
S5T8803A01-S0B0 |
10 CH PLL |
Samsung Electronic |
| 262 |
T73LVP20-S08 |
3.3V LVTTL/LVCMOS-to-Differential LVPECL Translator |
etc |
| 263 |
T73LVP20-S08-TNR |
3.3V LVTTL/LVCMOS-to-Differential LVPECL Translator |
etc |
| 264 |
T73LVP22-S08 |
Dual 3.3V LVTTL/LVCMOS-to-Differential |
etc |
| 265 |
T73LVP22-S08-TNR |
Dual 3.3V LVTTL/LVCMOS-to-Differential |
etc |
| 266 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 267 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 268 |
WT7510-S080WT-12 |
protection circuits, power good output (PGO), fault protection latch (FPL_N) CONTROL |
Unknow |
| 269 |
WT7511-S080WT-12 |
protection circuits, power good output (PGO), fault protection latch (FPL_N) and a protection detector function (PDON_N) control |
Unknow |
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