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Datasheets for -SIL

Datasheets found :: 254
Page: | 5 | 6 | 7 | 8 | 9 |
No. Part Name Description Manufacturer
241 SIM2-1512S-SIL7 2 W DC/DC SIM-SIL module with 15 V input, 12 V/166 mA output HN Electronic Components
242 SIM2-1515D-SIL7 2 W DC/DC SIM-SIL module with 15 V input, 15 V/66 mA output HN Electronic Components
243 SIM2-1515D-SIL7 2 W DC/DC SIM-SIL module with 15 V input, 15 V/66 mA output HN Electronic Components
244 SIM2-1515S-SIL7 2 W DC/DC SIM-SIL module with 15 V input, 15 V/132 mA output HN Electronic Components
245 SIM2-1515S-SIL7 2 W DC/DC SIM-SIL module with 15 V input, 15 V/132 mA output HN Electronic Components
246 TO-5 LOW-SILHOUETTE PACKAGE OUTLINE DRAWINGS Sprague
247 W6NRD0X-0000 Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
248 W6NRE0X-0000 Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
249 W6NXD0K-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
250 W6NXD0KLSR-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
251 W6NXD3J-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
252 W6NXD3K-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
253 W6NXD3L-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
254 W6PXD3O-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER


Datasheets found :: 254
Page: | 5 | 6 | 7 | 8 | 9 |



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