| No. |
Part Name |
Description |
Manufacturer |
| 241 |
29C021TC-3 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 250 ns. |
Turbo IC |
| 242 |
29C021TC-3 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 250 ns. |
Turbo IC |
| 243 |
29C021TI-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 244 |
29C021TI-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 245 |
29C021TI-2 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 200 ns. |
Turbo IC |
| 246 |
29C021TI-2 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 200 ns. |
Turbo IC |
| 247 |
29C021TI-3 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 250 ns. |
Turbo IC |
| 248 |
29C021TI-3 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 250 ns. |
Turbo IC |
| 249 |
29C021TM-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 250 |
29C021TM-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 251 |
29C021TM-2 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 200 ns. |
Turbo IC |
| 252 |
29C021TM-2 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 200 ns. |
Turbo IC |
| 253 |
29C021TM-3 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 250 ns. |
Turbo IC |
| 254 |
29C021TM-3 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 250 ns. |
Turbo IC |
| 255 |
2N3390 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
| 256 |
2N3391 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
| 257 |
2N3391A |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
| 258 |
2N3392 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
| 259 |
2N3393 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
| 260 |
2N3394 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
| 261 |
2N3414 |
Silicon transistor. 25V, 500mA. |
General Electric Solid State |
| 262 |
2N3415 |
0.360W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.500A Ic, 180 - 540 hFE |
Continental Device India Limited |
| 263 |
2N3415 |
Silicon transistor. 25V, 500mA. |
General Electric Solid State |
| 264 |
2N3440 |
1.000W High Voltage NPN Metal Can Transistor. 250V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
| 265 |
2N3702 |
0.625W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.600A Ic, 60 - 300 hFE |
Continental Device India Limited |
| 266 |
2N4124 |
Planar epitaxial passivated NPN silicon transistor. 25V, 200mA. |
General Electric Solid State |
| 267 |
2N5089 |
0.625W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.050A Ic, 400 - 1200 hFE |
Continental Device India Limited |
| 268 |
2N5172 |
0.400W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.150A Ic, 100 - 500 hFE |
Continental Device India Limited |
| 269 |
2N5172 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
| 270 |
2N5306 |
Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. |
General Electric Solid State |
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