| No. |
Part Name |
Description |
Manufacturer |
| 241 |
MIE-184H4 |
GaAlAs 1.8mm PACKAGE INFRARED EMITTING DIODE |
Unity Opto Technology |
| 242 |
PDA54-11EWA |
13.8mm(0.54INCH) 14SEGMENT DUAL DIGIT ALPHANUMERIC NUMERICDISPLAYS |
Kingbright Electronic |
| 243 |
PDA54-12EWA |
13.8mm(0.54INCH) 14SEGMENT DUAL DIGIT ALPHANUMERIC NUMERICDISPLAYS |
Kingbright Electronic |
| 244 |
QTLP600CIBTR |
Blue Surface Mount LED Lamp - Super Bright 0603 (0.8mm Height) |
Fairchild Semiconductor |
| 245 |
QTLP600CIGTR |
True Green Surface Mount LED Lamp - Super Bright 0603 (0.8mm Height) |
Fairchild Semiconductor |
| 246 |
QTLP660CAGTR |
Yellow-Green Surface Mount LED Lamp - Super Bright 1.8mm (Dome Lens) |
Fairchild Semiconductor |
| 247 |
QTLP660CBTR |
Cree 430nm Blue Surface Mount LED Lamp - Standard Bright 1.8mm (Dome Lens) |
Fairchild Semiconductor |
| 248 |
QTLP660CETR |
Orange Surface Mount LED Lamp - Super Bright 1.8mm (Dome Lens) |
Fairchild Semiconductor |
| 249 |
QTLP660CIBTR |
InGaN Blue Surface Mount LED Lamp - Super Bright 1.8mm (Dome Lens) |
Fairchild Semiconductor |
| 250 |
QTLP660CIGTR |
InGaN True-Green Surface Mount LED Lamp - Super Bright 1.8mm (Dome Lens) |
Fairchild Semiconductor |
| 251 |
QTLP660CIR |
1.8mm Dome Lens Emitting Diode |
Fairchild Semiconductor |
| 252 |
QTLP660COTR |
Yellow-Orange Surface Mount LED Lamp - Super Bright 1.8mm (Dome Lens) |
Fairchild Semiconductor |
| 253 |
QTLP660CRTR |
Red Surface Mount LED Lamp - Super Bright 1.8mm (Dome Lens) |
Fairchild Semiconductor |
| 254 |
QTLP660CYTR |
Yellow Surface Mount LED Lamp - Super Bright 1.8mm (Dome Lens) |
Fairchild Semiconductor |
| 255 |
TC72-2.8MMF |
Thermal Management Products- Temperature Sensors |
Microchip |
| 256 |
TC72-2.8MMFTR |
Thermal Management Products- Temperature Sensors |
Microchip |
| 257 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 258 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 259 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 260 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 261 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 262 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 263 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 264 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 265 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 266 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 267 |
W6NXD0KLSR-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 268 |
W6NXD3J-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 269 |
W6NXD3K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 270 |
W6NXD3L-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
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