| No. |
Part Name |
Description |
Manufacturer |
| 241 |
ERG2SGW104E |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 242 |
ERG2SJ104E |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 243 |
ERG2SJW104E |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 244 |
ERG3DGW204E |
Leaded, Anti-Pulse Power Resistors |
Panasonic |
| 245 |
ERG3DGW304E |
Leaded, Anti-Pulse Power Resistors |
Panasonic |
| 246 |
ERG3DJW204E |
Leaded, Anti-Pulse Power Resistors |
Panasonic |
| 247 |
ERG3DJW304E |
Leaded, Anti-Pulse Power Resistors |
Panasonic |
| 248 |
ERG3FJS104E |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 249 |
ERG3FJX104E |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 250 |
ERG3SGW104E |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 251 |
ERG3SJW104E |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 252 |
EVAL-ADG904EB |
Wideband, 37 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 4:1 Mux/SP4T |
Analog Devices |
| 253 |
FLEX-M24LR04E |
45 mm x 75 mm flexible antenna reference board for M24LR04E-R Dual Interface EEPROM, NOT FOR SALE |
ST Microelectronics |
| 254 |
FLEX-M24LR04E |
45 mm x 75 mm flexible antenna reference board for M24LR04E-R Dual Interface EEPROM, NOT FOR SALE |
ST Microelectronics |
| 255 |
GLT4160L04E-40J3 |
40ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 256 |
GLT4160L04E-40TC |
40ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 257 |
GLT4160L04E-50J3 |
50ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 258 |
GLT4160L04E-50TC |
50ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 259 |
GLT4160L04E-60J3 |
60ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 260 |
GLT4160L04E-60TC |
60ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 261 |
GLT4160L04E-70J3 |
70ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 262 |
GLT4160L04E-70TC |
70ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 263 |
GLT4160M04E-60J3 |
60ns; 4k x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 264 |
GLT4160M04E-60TC |
60ns; 4k x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 265 |
GLT4160M04E-70J3 |
70ns; 4k x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 266 |
GLT4160M04E-70TC |
70ns; 4k x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 267 |
GMS81C1404E D |
8-BIT SINGLE-CHIP MICROCONTROLLERS |
Hynix Semiconductor |
| 268 |
GMS81C1404E SK |
8-BIT SINGLE-CHIP MICROCONTROLLERS |
Hynix Semiconductor |
| 269 |
GMS81C1404ED |
ROM/RAM size:4 Kb/192 bytes, 2.2-5.5 V, 8 BIT single chip microcontroller |
Hynix Semiconductor |
| 270 |
GMS81C1404ESK |
ROM/RAM size:4 Kb/192 bytes, 2.2-5.5 V, 8 BIT single chip microcontroller |
Hynix Semiconductor |
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