| No. |
Part Name |
Description |
Manufacturer |
| 241 |
UBA1707TS_C1 |
Cordless telephone, answering machine line interface |
Philips |
| 242 |
UBA1707TS_C2 |
Cordless telephone, answering machine line interface |
Philips |
| 243 |
UBA1707T_C1 |
Cordless telephone, answering machine line interface |
Philips |
| 244 |
UBA1707T_C2 |
Cordless telephone, answering machine line interface |
Philips |
| 245 |
UBA2007TK/N2 |
Charge switch |
Philips |
| 246 |
UBA2007TK/N2 |
UBA2007; Charge switch |
Philips |
| 247 |
UPA2707TP |
SWITCHING N-CHANNEL POWER MOSFET |
NEC |
| 248 |
UPA2707TP-E1 |
SWITCHING N-CHANNEL POWER MOSFET |
NEC |
| 249 |
UPA2707TP-E1-AZ |
SWITCHING N-CHANNEL POWER MOSFET |
NEC |
| 250 |
UPA2707TP-E2 |
SWITCHING N-CHANNEL POWER MOSFET |
NEC |
| 251 |
UPA2707TP-E2-AZ |
SWITCHING N-CHANNEL POWER MOSFET |
NEC |
| 252 |
UPA507TE |
Pch enhancement-type MOS FET (On-chip schottky barrier diode(SBD)) |
NEC |
| 253 |
UPA507TE-T1 |
Pch enhancement-type MOS FET (On-chip schottky barrier diode(SBD)) |
NEC |
| 254 |
UPA507TE-T2 |
Pch enhancement-type MOS FET (On-chip schottky barrier diode(SBD)) |
NEC |
| 255 |
UPA607T |
P-CHANNEL MOS FET 6-PIN 2 CIRCUITS FOR SWITCHING |
NEC |
| 256 |
UPA807T |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD |
NEC |
| 257 |
UPA807T-T1 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD |
NEC |
| 258 |
UPC2907T |
THREE TERMINAL LOW DROPOUT VOLTAGE REGULATOR |
NEC |
| 259 |
UPC29M07T |
THREE TERMINAL LOW DROPOUT VOLTAGE REGULATOR |
NEC |
| 260 |
UPC78L07T |
THREE TERMINAL POSITIVE VOLTAGE REGULATORS |
NEC |
| 261 |
UPC78L07T-E1 |
Positive output three-terminal regulator |
NEC |
| 262 |
UPC78L07T-E2 |
Positive output three-terminal regulator |
NEC |
| 263 |
V607TE01 |
VOLTAGE CONTROLLED OSCILLATOR |
Z communications |
| 264 |
V607TE02 |
VOLTAGE CONTROLLED OSCILLATOR |
Z communications |
| 265 |
VMK165-007T |
MOSFET Modules |
IXYS |
| 266 |
VNB10N07TR-E |
OMNIFET :FULLY AUTOPROTECTED POWER MOSFET |
ST Microelectronics |
| 267 |
VNB20N07TR-E |
OMNIFET :FULLY AUTOPROTECTED POWER MOSFET |
ST Microelectronics |
| 268 |
VND5N07TR-E |
OMNIFET :FULLY AUTOPROTECTED POWER MOSFET |
ST Microelectronics |
| 269 |
VNV20N07TR-E |
OMNIFET :FULLY AUTOPROTECTED POWER MOSFET |
ST Microelectronics |
| 270 |
ZXMHC10A07T8 |
COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE |
Diodes |
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