| No. |
Part Name |
Description |
Manufacturer |
| 241 |
S5T8808X01-V0B0 |
PLL FREQUENCY SHNTHESIZER FOR PAGER |
Samsung Electronic |
| 242 |
S5T8809X01-R0B0 |
PLL FREQUENCY SYNTHESIZER FOR PAGER |
Samsung Electronic |
| 243 |
SC1869A-00B00 |
Adaptive RF Power Amplifier Linearizer |
MAXIM - Dallas Semiconductor |
| 244 |
SC1869A-00B00E |
Adaptive RF Power Amplifier Linearizer |
MAXIM - Dallas Semiconductor |
| 245 |
SC1889A-00B00 |
Adaptive RF Power Amplifier Linearizer with Dual RMS Power Measurement Unit |
MAXIM - Dallas Semiconductor |
| 246 |
SC1889A-00B00E |
Adaptive RF Power Amplifier Linearizer with Dual RMS Power Measurement Unit |
MAXIM - Dallas Semiconductor |
| 247 |
SC1894A-00B00 |
225MHz to 3800MHz RF Power Amplifier Linearizer (RFPAL) |
MAXIM - Dallas Semiconductor |
| 248 |
SC1894A-00B00E |
225MHz to 3800MHz RF Power Amplifier Linearizer (RFPAL) |
MAXIM - Dallas Semiconductor |
| 249 |
SDBN500B01 |
500mA NPN TRANSISTOR SWITCH WITH SNUBBER DIODE |
Diodes |
| 250 |
STU60B0 |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 251 |
STUP0B0 |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 252 |
SZ10B0 |
SURFACE MOUNT SILICON ZENER DIODES |
EIC discrete Semiconductors |
| 253 |
SZ30B0 |
SURFACE MOUNT SILICON ZENER DIODES |
EIC discrete Semiconductors |
| 254 |
T10B035 |
Glass passivated junction |
Littelfuse |
| 255 |
T10B035B |
T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 32V,max. Ir = 50uA @ Vr = 35V,max, Bulk (500pcs). |
Littelfuse |
| 256 |
T10B035T |
T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 32V,max. Ir = 50uA @ Vr = 35V,max, Tape and reeled (1500pcs). |
Littelfuse |
| 257 |
T10B065 |
Glass passivated junction |
Littelfuse |
| 258 |
T10B065B |
T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 55V,max. Ir = 50uA @ Vr = 65V,max, Bulk (500pcs). |
Littelfuse |
| 259 |
T10B065T |
T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 55V,max. Ir = 50uA @ Vr = 65V,max, Tape and reeled (1500pcs). |
Littelfuse |
| 260 |
TPD1E0B04 |
1-Channel ESD Protection Diode for USB Type-C and Antenna Protection 2-X2SON -40 to 125 |
Texas Instruments |
| 261 |
TPD1E0B04DPLR |
1-Channel ESD Protection Diode for USB Type-C and Antenna Protection 2-X2SON -40 to 125 |
Texas Instruments |
| 262 |
TPD1E0B04DPLT |
1-Channel ESD Protection Diode for USB Type-C and Antenna Protection 2-X2SON -40 to 125 |
Texas Instruments |
| 263 |
TPD1E10B06 |
Single Channel ESD in 0402 package with 10pF Capacitance and 6V Breakdown |
Texas Instruments |
| 264 |
TPD1E10B06DPYR |
Single-Channel ESD in 0402 Package With 10pF Capacitance and 6V Breakdown 2-X1SON -40 to 125 |
Texas Instruments |
| 265 |
TPD1E10B06DPYT |
Single-Channel ESD in 0402 Package With 10pF Capacitance and 6V Breakdown 2-X1SON -40 to 125 |
Texas Instruments |
| 266 |
TPD1E10B09 |
Single Channel ESD Protection in 0402 package with 10pF Capacitance and 9V Breakdown |
Texas Instruments |
| 267 |
TPD1E10B09DPYR |
Single-Channel ESD Protection in 0402 Package With 10pF Capacitance and 9V Breakdown 2-X1SON -40 to 125 |
Texas Instruments |
| 268 |
TPD1E10B09DPYT |
Single-Channel ESD Protection in 0402 Package With 10pF Capacitance and 9V Breakdown 2-X1SON |
Texas Instruments |
| 269 |
TS10B01G |
Discrete Devices -Bridge Rectifier-Standard Bridge |
Taiwan Semiconductor |
| 270 |
TS10B02G |
Discrete Devices -Bridge Rectifier-Standard Bridge |
Taiwan Semiconductor |
| | | |
