| No. |
Part Name |
Description |
Manufacturer |
| 241 |
FT500DL-6 |
Phase control SCR. 500A, 300V. |
Powerex Power Semiconductors |
| 242 |
FT500DL-8 |
Phase control SCR. 500A, 400V. |
Powerex Power Semiconductors |
| 243 |
FT800DL |
Phase Control SCR 800 Amperes Avg 200-1200 Volts |
Powerex Power Semiconductors |
| 244 |
FT800DL-10 |
Phase Control SCR 800 Amperes Avg 200-1200 Volts |
Powerex Power Semiconductors |
| 245 |
FT800DL-12 |
Phase Control SCR 800 Amperes Avg 200-1200 Volts |
Powerex Power Semiconductors |
| 246 |
FT800DL-16 |
Phase Control SCR 800 Amperes Avg 200-1200 Volts |
Powerex Power Semiconductors |
| 247 |
FT800DL-20 |
Phase Control SCR 800 Amperes Avg 200-1200 Volts |
Powerex Power Semiconductors |
| 248 |
FT800DL-24 |
Phase Control SCR 800 Amperes Avg 200-1200 Volts |
Powerex Power Semiconductors |
| 249 |
FT800DL-4 |
Phase Control SCR 800 Amperes Avg 200-1200 Volts |
Powerex Power Semiconductors |
| 250 |
FT800DL-6 |
Phase Control SCR 800 Amperes Avg 200-1200 Volts |
Powerex Power Semiconductors |
| 251 |
FT800DL-8 |
Phase Control SCR 800 Amperes Avg 200-1200 Volts |
Powerex Power Semiconductors |
| 252 |
GTL2000DL |
22-bit bi-directional low voltage translator |
NXP Semiconductors |
| 253 |
GTL2000DL |
22-bit GTL processor voltage clamp |
Philips |
| 254 |
H5N2510DL |
Transistors>Switching/MOSFETs |
Renesas |
| 255 |
HM514100DLS-6 |
4,194,304-word x 1-bit dynamic RAM, 60ns |
Hitachi Semiconductor |
| 256 |
HM514100DLS-7 |
4,194,304-word x 1-bit dynamic RAM, 70ns |
Hitachi Semiconductor |
| 257 |
HM514100DLS-8 |
4,194,304-word x 1-bit dynamic RAM, 80ns |
Hitachi Semiconductor |
| 258 |
HM514260DLJI-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 259 |
HM514260DLJI-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 260 |
IPL10040DL |
Shortform Catalogue |
etc |
| 261 |
ISP1130DL |
Universal Serial Bus compound hub with integrated keyboard controller |
Philips |
| 262 |
KM41C4000DLJ-5 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 50ns |
Samsung Electronic |
| 263 |
KM41C4000DLJ-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 60ns |
Samsung Electronic |
| 264 |
KM41C4000DLJ-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 70ns |
Samsung Electronic |
| 265 |
KM41C4000DLT-5 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 50ns |
Samsung Electronic |
| 266 |
KM41C4000DLT-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 60ns |
Samsung Electronic |
| 267 |
KM41C4000DLT-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 70ns |
Samsung Electronic |
| 268 |
KM41V4000DLJ-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 60ns |
Samsung Electronic |
| 269 |
KM41V4000DLJ-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 70ns |
Samsung Electronic |
| 270 |
KM41V4000DLT-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 60ns |
Samsung Electronic |
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