| No. |
Part Name |
Description |
Manufacturer |
| 241 |
CM300DU-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 242 |
CM300DU-24H |
Dual IGBTMOD 300 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 243 |
CM300DU-34KA |
IGBT Modules:1700V |
Mitsubishi Electric Corporation |
| 244 |
CM300DU-34KA |
Dual IGBTMOD 300 Amperes/1700 Volts |
Powerex Power Semiconductors |
| 245 |
CM350DU-5F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 246 |
CM350DU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 247 |
CM350DU-5F |
Trench Gate Design Dual IGBTMOD�� 350 Amperes/250 Volts |
Powerex Power Semiconductors |
| 248 |
CM400DU-12F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 249 |
CM400DU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 250 |
CM400DU-12F |
Trench Gate Design Dual IGBTMOD�� 400 Amperes/600 Volts |
Powerex Power Semiconductors |
| 251 |
CM400DU-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 252 |
CM400DU-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 253 |
CM400DU-12H |
Dual IGBTMOD 400 Amperes/600 Volts |
Powerex Power Semiconductors |
| 254 |
CM400DU-12NFH |
High Frequency Dual IGBTMOD�� 400 Amperes/600 Volts |
Powerex Power Semiconductors |
| 255 |
CM400DU-24F |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 256 |
CM400DU-24F |
Dual IGBTMOD 400 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 257 |
CM400DU-34KA |
IGBT Modules:1700V |
Mitsubishi Electric Corporation |
| 258 |
CM400DU-34KA |
Dual IGBTMOD 400 Amperes/1700 Volts |
Powerex Power Semiconductors |
| 259 |
CM400DU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 260 |
CM400DU-5F |
Trench Gate Design Dual IGBTMOD�� 400 Amperes/250 Volts |
Powerex Power Semiconductors |
| 261 |
CM50DU-24F |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 262 |
CM50DU-24F |
Trench Gate Design Dual IGBTMOD�� 50 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 263 |
CM50DU-24H |
IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 264 |
CM50DU-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 265 |
CM50DU-24H |
Dual IGBTMOD�� U-Series Module 50 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 266 |
CM600DU-24F |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 267 |
CM600DU-24F |
Dual IGBTMOD 600 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 268 |
CM600DU-24NF |
HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 269 |
CM600DU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 270 |
CM600DU-5F |
Dual IGBTMOD 600 Amperes/1200 Volts |
Powerex Power Semiconductors |
| | | |
