| No. |
Part Name |
Description |
Manufacturer |
| 241 |
MAX66100E-000AA+ |
ISO 15693-Compliant 64-Bit UID |
MAXIM - Dallas Semiconductor |
| 242 |
MAX66140E-000AA+ |
ISO 15693-Compliant Secure Memory |
MAXIM - Dallas Semiconductor |
| 243 |
MAXQ610E-0000+ |
16-Bit Microcontroller with Infrared Module |
MAXIM - Dallas Semiconductor |
| 244 |
MAXQ610E-UEI+ |
16-Bit Microcontroller with Infrared Module |
MAXIM - Dallas Semiconductor |
| 245 |
MBRM110E-D |
Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package |
ON Semiconductor |
| 246 |
MBRM120E-D |
Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package |
ON Semiconductor |
| 247 |
MCR470E-10 |
BEAM-FIRED Integrated Gate Fast Switch Thyristor 470A RMS |
Motorola |
| 248 |
MCR470E-100 |
BEAM-FIRED Integrated Gate Fast Switch Thyristor 470A RMS |
Motorola |
| 249 |
MCR470E-110 |
BEAM-FIRED Integrated Gate Fast Switch Thyristor 470A RMS |
Motorola |
| 250 |
MCR470E-120 |
BEAM-FIRED Integrated Gate Fast Switch Thyristor 470A RMS |
Motorola |
| 251 |
MCR470E-20 |
BEAM-FIRED Integrated Gate Fast Switch Thyristor 470A RMS |
Motorola |
| 252 |
MCR470E-30 |
BEAM-FIRED Integrated Gate Fast Switch Thyristor 470A RMS |
Motorola |
| 253 |
MCR470E-40 |
BEAM-FIRED Integrated Gate Fast Switch Thyristor 470A RMS |
Motorola |
| 254 |
MCR470E-50 |
BEAM-FIRED Integrated Gate Fast Switch Thyristor 470A RMS |
Motorola |
| 255 |
MCR470E-60 |
BEAM-FIRED Integrated Gate Fast Switch Thyristor 470A RMS |
Motorola |
| 256 |
MCR470E-70 |
BEAM-FIRED Integrated Gate Fast Switch Thyristor 470A RMS |
Motorola |
| 257 |
MCR470E-80 |
BEAM-FIRED Integrated Gate Fast Switch Thyristor 470A RMS |
Motorola |
| 258 |
MCR470E-90 |
BEAM-FIRED Integrated Gate Fast Switch Thyristor 470A RMS |
Motorola |
| 259 |
MGP11N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 260 |
MGP14N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 261 |
MGP21N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 262 |
MGP4N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 263 |
MGP7N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 264 |
MSC23S2640E-8BS8 |
2,097,152 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (1BANK): |
OKI electronic components |
| 265 |
MSM514260E-60JS |
262,144-word x 16-bit dynamic RAM |
OKI electronic components |
| 266 |
MSM514260E-60JS |
262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE |
OKI electronic componets |
| 267 |
MSM514260E-60TS-K |
262,144-Word x 16-Bit DRAM fast page mode, 60ns |
OKI electronic components |
| 268 |
MSM514260E-60TS-K |
262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE |
OKI electronic componets |
| 269 |
MSM514260E-70 |
262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE |
OKI electronic componets |
| 270 |
MSM514260E-70JS |
262,144-word x 16-bit dynamic RAM |
OKI electronic components |
| | | |
