| No. |
Part Name |
Description |
Manufacturer |
| 241 |
STH180N10F3-6 |
N-channel 100 V, 3.9 mOhm, 180 A, H2PAK-6 STripFET(TM) III Power MOSFET |
ST Microelectronics |
| 242 |
STH240N10F7-2 |
N-channel 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in a H2PAK-2 package |
ST Microelectronics |
| 243 |
STH240N10F7-6 |
N-channel 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in a H2PAK-6 package |
ST Microelectronics |
| 244 |
STH310N10F7-2 |
N-channel 100 V, 1.9 mOhm typ., 180 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in H2PAK-2 package |
ST Microelectronics |
| 245 |
STH310N10F7-6 |
N-channel 100 V, 1.9 mOhm typ., 180 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in H2PAK-6 package |
ST Microelectronics |
| 246 |
STH60N10 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 247 |
STH60N10FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 248 |
STH60N10FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 249 |
STH60N10FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 250 |
STH80N10F7-2 |
N-channel 100 V, 0.008 Ohm typ., 80 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in H2PAK-2 package |
ST Microelectronics |
| 251 |
STI150N10F7 |
N-channel 100 V, 0.0036 Ohm typ., 110 A, STripFET(TM) VII DeepGATE(TM) Power MOSFET in I2PAK package |
ST Microelectronics |
| 252 |
STL100N10F7 |
N-channel 100 V, 0.0062 Ohm typ., 19 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 5x6 package |
ST Microelectronics |
| 253 |
STL110N10F7 |
N-channel 100 V, 0.0063 Ohm typ., 100 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in a PowerFLAT 5x6 package |
ST Microelectronics |
| 254 |
STL30N10F7 |
N-channel 100 V, 0.027 Ohm typ., 8 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in PowerFLAT(TM) 5x6 package |
ST Microelectronics |
| 255 |
STL40N10F7 |
N-channel 100 V, 0.02 Ohm typ., 10 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in PowerFLAT(TM) 5x6 package |
ST Microelectronics |
| 256 |
STL60N10F7 |
N-channel 100 V, 0.013 Ohm typ., 12 A, STripFET(TM) VII DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 5x6 package |
ST Microelectronics |
| 257 |
STL70N10F3 |
N-channel 100 V, 0.0065 Ohm, 16 A PowerFLAT(TM) 5x6 STripFET(TM) III Power MOSFET |
ST Microelectronics |
| 258 |
STL90N10F7 |
N-channel 100 V, 0.009 Ohm typ., 16 A STripFET(TM) VII DeepGATE Power MOSFET in a PowerFLAT(TM) 5x6 package |
ST Microelectronics |
| 259 |
STP100N10F7 |
N-channel 100 V, 0.0068 Ohm typ., 80 A, STripFET(TM) VII DeepGATE(TM) Power MOSFET in TO-220 package |
ST Microelectronics |
| 260 |
STP110N10F7 |
N-channel 100 V, 5.1 mOhm typ., 110 A, STripFET(TM) VII DeepGATE Power MOSFET in TO-220 package |
ST Microelectronics |
| 261 |
STP130N10F3 |
N-channel 100 V, 8 mOhm typ., 120 A STripFET(TM) Power MOSFET in TO-220 package |
ST Microelectronics |
| 262 |
STP150N10F7 |
N-channel 100 V, 0.0036 Ohm typ., 110 A, STripFET(TM) VII DeepGATE(TM) Power MOSFET in TO-220 package |
ST Microelectronics |
| 263 |
STP180N10F3 |
N-channel 100 V, 4.5 mOhm, 120 A STripFET(TM) III Power MOSFET in TO-220 package |
ST Microelectronics |
| 264 |
STP20N10 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 265 |
STP20N10 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 266 |
STP20N10 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 267 |
STP20N10FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 268 |
STP20N10FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 269 |
STP20N10L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 270 |
STP20N10L |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
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