No. |
Part Name |
Description |
Manufacturer |
241 |
SD500N40MC |
Standard recovery diode |
International Rectifier |
242 |
SD500N40MSC |
Standard recovery diode |
International Rectifier |
243 |
SD500N40MTC |
Standard recovery diode |
International Rectifier |
244 |
SD500N40PC |
4000V 475A Std. Recovery Diode in a B-8package |
International Rectifier |
245 |
SD500N40PSC |
Standard recovery diode |
International Rectifier |
246 |
SD500N40PTC |
Standard recovery diode |
International Rectifier |
247 |
SD500N45MC |
Standard recovery diode |
International Rectifier |
248 |
SD500N45MSC |
Standard recovery diode |
International Rectifier |
249 |
SD500N45MTC |
Standard recovery diode |
International Rectifier |
250 |
SD500N45PC |
4500V 475A Std. Recovery Diode in a B-8package |
International Rectifier |
251 |
SD500N45PSC |
Standard recovery diode |
International Rectifier |
252 |
SD500N45PTC |
Standard recovery diode |
International Rectifier |
253 |
SDM20N40A |
DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE |
Diodes |
254 |
SDM20N40A-7 |
DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE |
Diodes |
255 |
SGR20N40L |
IGBT |
Fairchild Semiconductor |
256 |
SGR20N40LTF |
Discrete, IGBT |
Fairchild Semiconductor |
257 |
SGR20N40LTM |
Discrete, IGBT |
Fairchild Semiconductor |
258 |
SGU20N40L |
IGBT |
Fairchild Semiconductor |
259 |
SGU20N40LTU |
Discrete, IGBT |
Fairchild Semiconductor |
260 |
STB120N4F6 |
N-channel 40 V, 3.5 mOhm, 80 A, D2PAK STripFET(TM) VI DeepGATE(TM) Power MOSFET |
ST Microelectronics |
261 |
STB120N4LF6 |
N-channel 40 V, 3.1 mOhm, 80 A, D2PAK STripFET(TM) VI DeepGATE(TM) Power MOSFET |
ST Microelectronics |
262 |
STB270N4F3 |
N-channel 40 V, 1.6 mOhm typ., 160 A STripFET(TM) III PowerMOSFET in D2PAK package |
ST Microelectronics |
263 |
STD120N4F6 |
N-channel 40 V, 3.5 mOhm, 80 A, DPAK, STripFET(TM) VI DeepGATE(TM) Power MOSFET |
ST Microelectronics |
264 |
STD120N4LF6 |
N-channel 40 V, 3.1 mOhm, 80 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET |
ST Microelectronics |
265 |
STD80N4F6 |
Automotive-grade N-channel 40 V, 5.5 mOhm typ., 80 A, STripFET(TM) VI DeepGATE(TM) Power MOSFET in DPAK package |
ST Microelectronics |
266 |
STGB20N40LZ |
Automotive-grade 390 V internally clamped IGBT ESCIS 300 mJ |
ST Microelectronics |
267 |
STGD20N40LZ |
Automotive-grade 390 V internally clamped IGBT ESCIS 300 mJ |
ST Microelectronics |
268 |
STH270N4F3-2 |
N-channel 40 V, 1.4 mOhm typ., 180 A STripFET(TM) III Power MOSFET in H2PAK-2 package |
ST Microelectronics |
269 |
STH270N4F3-6 |
N-channel 40 V, 1.4 mOhm typ., 180 A STripFET(TM) III Power MOSFET in H2PAK-6 package |
ST Microelectronics |
270 |
STH320N4F6-2 |
N-channel 40 V, 1.1 mOhm typ., 200 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package |
ST Microelectronics |
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