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Datasheets for 0N4

Datasheets found :: 297
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No. Part Name Description Manufacturer
241 SD500N40MC Standard recovery diode International Rectifier
242 SD500N40MSC Standard recovery diode International Rectifier
243 SD500N40MTC Standard recovery diode International Rectifier
244 SD500N40PC 4000V 475A Std. Recovery Diode in a B-8package International Rectifier
245 SD500N40PSC Standard recovery diode International Rectifier
246 SD500N40PTC Standard recovery diode International Rectifier
247 SD500N45MC Standard recovery diode International Rectifier
248 SD500N45MSC Standard recovery diode International Rectifier
249 SD500N45MTC Standard recovery diode International Rectifier
250 SD500N45PC 4500V 475A Std. Recovery Diode in a B-8package International Rectifier
251 SD500N45PSC Standard recovery diode International Rectifier
252 SD500N45PTC Standard recovery diode International Rectifier
253 SDM20N40A DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE Diodes
254 SDM20N40A-7 DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE Diodes
255 SGR20N40L IGBT Fairchild Semiconductor
256 SGR20N40LTF Discrete, IGBT Fairchild Semiconductor
257 SGR20N40LTM Discrete, IGBT Fairchild Semiconductor
258 SGU20N40L IGBT Fairchild Semiconductor
259 SGU20N40LTU Discrete, IGBT Fairchild Semiconductor
260 STB120N4F6 N-channel 40 V, 3.5 mOhm, 80 A, D2PAK STripFET(TM) VI DeepGATE(TM) Power MOSFET ST Microelectronics
261 STB120N4LF6 N-channel 40 V, 3.1 mOhm, 80 A, D2PAK STripFET(TM) VI DeepGATE(TM) Power MOSFET ST Microelectronics
262 STB270N4F3 N-channel 40 V, 1.6 mOhm typ., 160 A STripFET(TM) III PowerMOSFET in D2PAK package ST Microelectronics
263 STD120N4F6 N-channel 40 V, 3.5 mOhm, 80 A, DPAK, STripFET(TM) VI DeepGATE(TM) Power MOSFET ST Microelectronics
264 STD120N4LF6 N-channel 40 V, 3.1 mOhm, 80 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET ST Microelectronics
265 STD80N4F6 Automotive-grade N-channel 40 V, 5.5 mOhm typ., 80 A, STripFET(TM) VI DeepGATE(TM) Power MOSFET in DPAK package ST Microelectronics
266 STGB20N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 300 mJ ST Microelectronics
267 STGD20N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 300 mJ ST Microelectronics
268 STH270N4F3-2 N-channel 40 V, 1.4 mOhm typ., 180 A STripFET(TM) III Power MOSFET in H2PAK-2 package ST Microelectronics
269 STH270N4F3-6 N-channel 40 V, 1.4 mOhm typ., 180 A STripFET(TM) III Power MOSFET in H2PAK-6 package ST Microelectronics
270 STH320N4F6-2 N-channel 40 V, 1.1 mOhm typ., 200 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package ST Microelectronics


Datasheets found :: 297
Page: | 5 | 6 | 7 | 8 | 9 | 10 |



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