| No. |
Part Name |
Description |
Manufacturer |
| 241 |
AT84AD004 |
Dual 8-bit 500 Msps ADC Provides 500 Msps sampling per channel or 1 Gsps sampling from one channel (interleaving mode) and integrates ... |
Atmel |
| 242 |
AT84XAD001BTD |
Dual 8-bit 1 Gsps ADC |
Atmel |
| 243 |
AV109-73LF |
GaAs IC 35 dB Voltage Variable Attenuator Single Positive 3 V Control 0.8-1 GHz |
Skyworks Solutions |
| 244 |
BAY66 |
Silicon power varactor diode for frequency multipliers up to 1 GHz |
VALVO |
| 245 |
BC121 green |
NPN Silicon Transistor in miniature case for AF applications |
Siemens |
| 246 |
BC201 green |
PNP Silicon Transistor in miniature case for AF-applications |
Siemens |
| 247 |
BF1012W |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 248 |
BF2000W |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 249 |
BF547 |
NPN 1 GHz wideband transistor |
Philips |
| 250 |
BF547W |
NPN 1 GHz wideband transistor |
Philips |
| 251 |
BF747 |
NPN 1 GHz wideband transistor |
Philips |
| 252 |
BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 253 |
BFQ17 |
NPN 1 GHz wideband transistor |
Philips |
| 254 |
BFQ29 |
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.) |
Siemens |
| 255 |
BFQ29P |
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.) |
Siemens |
| 256 |
BFR93P |
NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.) |
Siemens |
| 257 |
BFS17 |
NPN 1 GHz wideband transistor |
Philips |
| 258 |
BFS17W |
NPN 1 GHz wideband transistor |
NXP Semiconductors |
| 259 |
BFS17W |
NPN 1 GHz wideband transistor |
Philips |
| 260 |
BFS17W. |
RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA |
Infineon |
| 261 |
BFT93 |
PNP Silicon RF Transistor (For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA) |
Siemens |
| 262 |
BGA3012 |
1 GHz 12 dB gain wideband amplifier MMIC |
NXP Semiconductors |
| 263 |
BGA3015 |
1 GHz 15 dB gain wideband amplifier MMIC |
NXP Semiconductors |
| 264 |
BGA3018 |
1 GHz 18 dB gain wideband amplifier MMIC |
NXP Semiconductors |
| 265 |
BGU7031 |
1 GHz wideband low-noise amplifier |
NXP Semiconductors |
| 266 |
BGU7032 |
1 GHz wideband low-noise amplifier with bypass |
NXP Semiconductors |
| 267 |
BGU7033 |
1 GHz wideband low-noise amplifier with bypass |
NXP Semiconductors |
| 268 |
BGU7041 |
1 GHz wideband low-noise amplifier |
NXP Semiconductors |
| 269 |
BGU7042 |
1 GHz wideband low-noise amplifier with bypass |
NXP Semiconductors |
| 270 |
BGU7044 |
1 GHz wideband low-noise amplifier |
NXP Semiconductors |
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