| No. |
Part Name |
Description |
Manufacturer |
| 241 |
ASM5P2309A-1H-16-TR |
10 MHz to 133 MHz, 3.3 V zero delay buffer |
Alliance Semiconductor |
| 242 |
ASM5P2309A-1H-16-TT |
10 MHz to 133 MHz, 3.3 V zero delay buffer |
Alliance Semiconductor |
| 243 |
AT17LV002-10JI |
2 Mbit CPLD boot EEPROM. Speed 10 MHz. |
Cypress |
| 244 |
AT17LV010-10JI |
1 Mbit CPLD boot EEPROM. Speed 10 MHz. |
Cypress |
| 245 |
AT17LV512-10JI |
512 Kbit CPLD boot EEPROM. Speed 10 MHz. |
Cypress |
| 246 |
AT90S2313 |
2-Kbyte In-System programmable Flash Program Memory, 160 byte SRAM, 128 Byte EEPROM, Up to 10 MIPS throughput at 10 Mhz. |
Atmel |
| 247 |
ATMEGA168V-10AI |
8-bit microcontroller with 8K bytes In-system programmable flash. Speed 10 MHz. Power supply 1.8 - 5.5 V. |
Atmel |
| 248 |
ATMEGA168V-10MI |
8-bit microcontroller with 8K bytes In-system programmable flash. Speed 10 MHz. Power supply 1.8 - 5.5 V. |
Atmel |
| 249 |
ATMEGA168V-10PI |
8-bit microcontroller with 8K bytes In-system programmable flash. Speed 10 MHz. Power supply 1.8 - 5.5 V. |
Atmel |
| 250 |
ATTINY2313V-10SI |
8-bit microcontroller with 2K bytes in-system programmable flash. Speed 10 MHz. Power supply 1.8 - 5.5 V. |
Atmel |
| 251 |
AWT1921S11 |
Integrated High Power Amp 1610 MHz Advanced Product information |
Anadigics Inc |
| 252 |
BAR60 |
Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz) |
Siemens |
| 253 |
BAR61 |
Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz) |
Siemens |
| 254 |
BAT18 |
-Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 255 |
BAT18 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 256 |
BAT18 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 257 |
BAT18 |
-Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 258 |
BAT18-04 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 259 |
BAT18-05 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 260 |
BAT18-06 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 261 |
BLD6G21L-50 |
TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor |
NXP Semiconductors |
| 262 |
BLD6G21LS-50 |
TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor |
NXP Semiconductors |
| 263 |
BLD6G22L-50 |
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor |
NXP Semiconductors |
| 264 |
BLD6G22LS-50 |
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor |
NXP Semiconductors |
| 265 |
CGR-0218Z |
5 - 210 MHz InGaP HBT High Linearity Push-Pull Amplifier |
Qorvo |
| 266 |
CLC405 |
Low Cost, Low Power, 110 MHz Op Amp with Disable |
National Semiconductor |
| 267 |
CLC405AJ |
Low Cost, Low Power, 110 MHz Op Amp with Disable |
National Semiconductor |
| 268 |
CLC405AJE |
Low Cost, Low Power, 110 MHz Op Amp with Disable |
National Semiconductor |
| 269 |
CLC405AJE-TR13 |
Low Cost, Low Power, 110 MHz Op Amp with Disable |
National Semiconductor |
| 270 |
CLC405AJP |
Low Cost, Low Power, 110 MHz Op Amp with Disable |
National Semiconductor |
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