| No. |
Part Name |
Description |
Manufacturer |
| 241 |
NJG1104KB2-R1 |
800MHz BAND LNA GaAs MMIC |
New Japan Radio |
| 242 |
NJW1104 |
DOLBY PRO LOGIC SURROUND DECODER |
New Japan Radio |
| 243 |
NJW1104FC2 |
DOLBY PRO LOGIC SURROUND DECODER |
New Japan Radio |
| 244 |
NJW1104FC2-80 |
DOLBY PRO LOGIC SURROUND DECODER |
New Japan Radio |
| 245 |
NTE1104 |
Integrated Circuit Wide and Narrow Band Amp, FM/IF Limiter |
NTE Electronics |
| 246 |
P1104U |
solid state crowbar devices |
Teccor Electronics |
| 247 |
P1104UA |
90 V, multiport sidactor device |
Teccor Electronics |
| 248 |
P1104UB |
90 V, multiport sidactor device |
Teccor Electronics |
| 249 |
P1104UC |
90 V, multiport sidactor device |
Teccor Electronics |
| 250 |
PB-IRF1104L |
Leaded 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 251 |
PB-IRF1104S |
Leaded 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 252 |
PB-IRL1104L |
Leaded 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 253 |
PB-IRL1104S |
Leaded 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 254 |
PWR1104 |
1.5 WATT UNREGULATED DUAL-IN-LINE DC/DC CONVERTER |
C&D Technologies |
| 255 |
Q62702-A1104 |
Silicon Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type) |
Siemens |
| 256 |
Q62702-D1104 |
NPN SILICON EPIBASE TRANSISTORS |
Siemens |
| 257 |
Q62702-D1104 |
PNP SILICON EPIBASE TRANSISTORS |
Siemens |
| 258 |
Q62702-F1104 |
NPN SILICON RF TRANSISTOR (FOR LOW-NOISE, LOW-DISTORTION BROADBAND AMPLIFIERS IN ANTENNA AND TELECOMMUNICATIONS SYSTEMS UP TO 2GHz) |
Siemens |
| 259 |
R5110410 |
General Purpose Rectifier (100-150 Amperes Average 1200 Volts) |
Powerex Power Semiconductors |
| 260 |
R5110410XXWA |
400V, 100A general purpose single diode |
Powerex Power Semiconductors |
| 261 |
R5110415 |
General Purpose Rectifier (100-150 Amperes Average 1200 Volts) |
Powerex Power Semiconductors |
| 262 |
R5110415XXWA |
400V, 150A general purpose single diode |
Powerex Power Semiconductors |
| 263 |
R6110420 |
General Purpose Rectifier (200-300 Amperes Average 1200 Volts) |
Powerex Power Semiconductors |
| 264 |
R6110425 |
General Purpose Rectifier (200-300 Amperes Average 1200 Volts) |
Powerex Power Semiconductors |
| 265 |
R6110425XXYZ |
400V, 250A general purpose single diode |
Powerex Power Semiconductors |
| 266 |
R6110430 |
General Purpose Rectifier (200-300 Amperes Average 1200 Volts) |
Powerex Power Semiconductors |
| 267 |
R6110430XXYZ |
400V, 300A general purpose single diode |
Powerex Power Semiconductors |
| 268 |
RN1104 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 269 |
RN1104ACT |
Bias resistor built-in transistor (BRT) |
TOSHIBA |
| 270 |
RN1104CT |
Bias resistor built-in transistor (BRT) |
TOSHIBA |
| | | |
