| No. |
Part Name |
Description |
Manufacturer |
| 241 |
BQ27411DRZR-G1A |
Pack-Side Impedance Track? Fuel Gauge | Battery Gas Gauge 12-SON -40 to 85 |
Texas Instruments |
| 242 |
BQ27411DRZR-G1C |
Pack-Side Impedance Track? Fuel Gauge | Battery Gas Gauge 12-SON -40 to 85 |
Texas Instruments |
| 243 |
BQ27411DRZT-G1A |
Pack-Side Impedance Track? Fuel Gauge | Battery Gas Gauge 12-SON -40 to 85 |
Texas Instruments |
| 244 |
BQ27411DRZT-G1C |
Pack-Side Impedance Track? Fuel Gauge | Battery Gas Gauge 12-SON -40 to 85 |
Texas Instruments |
| 245 |
BQ29411DCT3R |
Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.40V) 8-SM8 -40 to 110 |
Texas Instruments |
| 246 |
BQ29411DCTR |
Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.40V) 8-SM8 -40 to 110 |
Texas Instruments |
| 247 |
BQ29411DCTRG4 |
Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.40V) 8-SM8 -40 to 110 |
Texas Instruments |
| 248 |
BQ29411DCTT |
Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.40V) 8-SM8 -40 to 110 |
Texas Instruments |
| 249 |
BQ296111DSGR |
2-4S Overvoltage Protector with LDO Output 8-WSON -40 to 110 |
Texas Instruments |
| 250 |
BQ296111DSGT |
2-4S Overvoltage Protector with LDO Output 8-WSON -40 to 110 |
Texas Instruments |
| 251 |
BQ771611DPJR |
Family Overvoltage Protection for 2 to 4-Series Cell Li-Ion Batts w Ext Delay Capacitor 8-WSON -40 to 85 |
Texas Instruments |
| 252 |
BQ771611DPJT |
Family Overvoltage Protection for 2 to 4-Series Cell Li-Ion Batts w Ext Delay Capacitor 8-WSON -40 to 85 |
Texas Instruments |
| 253 |
BS616LV2011DC |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit |
Brilliance Semiconductor |
| 254 |
BS616LV2011DI |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit |
Brilliance Semiconductor |
| 255 |
BS616LV4011DC |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
Brilliance Semiconductor |
| 256 |
BS616LV4011DI |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
Brilliance Semiconductor |
| 257 |
BS616UV2011DC |
Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit |
Brilliance Semiconductor |
| 258 |
BS616UV2011DI |
Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit |
Brilliance Semiconductor |
| 259 |
BS616UV8011DC |
Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit |
Brilliance Semiconductor |
| 260 |
BS616UV8011DI |
Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit |
Brilliance Semiconductor |
| 261 |
BUP311D |
IGBT With Antiparallel Diode Preliminary data sheet |
Infineon |
| 262 |
BXY11D |
Silicon varactor for frequency multiplication up to the GHz range |
Siemens |
| 263 |
BXY11D |
Silicon charge storage varactors for frequency multiplication |
Siemens |
| 264 |
BYD11D |
Controlled avalanche rectifiers |
Philips |
| 265 |
BZP611D |
Stabilistor (dioda Zenera) |
Ultra CEMI |
| 266 |
CBT16211DGG |
24-bit bus switch with 12-bit output enables |
NXP Semiconductors |
| 267 |
CBT16211DGG |
OCTAL TRANSPARENT D-TYPE LATCHES WITH 3-STATE OUTPUTS |
Philips |
| 268 |
CBT16211DL |
24-bit bus switch with 12-bit output enables |
NXP Semiconductors |
| 269 |
CBT16211DL |
OCTAL TRANSPARENT D-TYPE LATCHES WITH 3-STATE OUTPUTS |
Philips |
| 270 |
CBTD16211DGG |
24-bit level shifting bus exchange switch with 12-bit output enables |
Integrated Circuit Systems |
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