No. |
Part Name |
Description |
Manufacturer |
241 |
EN27LV512120JI |
512Kbit EPROM (64K x 8). Speed 120ns. Single +3.3V power supply - regulated power supply 3.0V - 3.6V |
Eon Silicon Solution |
242 |
EN27LV512120P |
512Kbit EPROM (64K x 8). Speed 120ns. Single +3.3V power supply - regulated power supply 3.0V - 3.6V |
Eon Silicon Solution |
243 |
EN27LV512120PI |
512Kbit EPROM (64K x 8). Speed 120ns. Single +3.3V power supply - regulated power supply 3.0V - 3.6V |
Eon Silicon Solution |
244 |
EN27LV512120T |
512Kbit EPROM (64K x 8). Speed 120ns. Single +3.3V power supply - regulated power supply 3.0V - 3.6V |
Eon Silicon Solution |
245 |
EN27LV512120TI |
512Kbit EPROM (64K x 8). Speed 120ns. Single +3.3V power supply - regulated power supply 3.0V - 3.6V |
Eon Silicon Solution |
246 |
EN27LV512B120J |
512Kbit EPROM (64K x 8). Speed 120ns. Single +3.3V power supply - unregulated power supply 2.7V - 3.6V |
Eon Silicon Solution |
247 |
EN27LV512B120JI |
512Kbit EPROM (64K x 8). Speed 120ns. Single +3.3V power supply - unregulated power supply 2.7V - 3.6V |
Eon Silicon Solution |
248 |
EN27LV512B120P |
512Kbit EPROM (64K x 8). Speed 120ns. Single +3.3V power supply - unregulated power supply 2.7V - 3.6V |
Eon Silicon Solution |
249 |
EN27LV512B120PI |
512Kbit EPROM (64K x 8). Speed 120ns. Single +3.3V power supply - unregulated power supply 2.7V - 3.6V |
Eon Silicon Solution |
250 |
EN27LV512B120T |
512Kbit EPROM (64K x 8). Speed 120ns. Single +3.3V power supply - unregulated power supply 2.7V - 3.6V |
Eon Silicon Solution |
251 |
EN27LV512B120TI |
512Kbit EPROM (64K x 8). Speed 120ns. Single +3.3V power supply - unregulated power supply 2.7V - 3.6V |
Eon Silicon Solution |
252 |
GLT6400M08LL-120ST |
120ns; Ultra low power 512K x 8 CMOS SRAM |
G-LINK Technology |
253 |
GLT6400M08SL-120ST |
120ns; Ultra low power 512K x 8 CMOS SRAM |
G-LINK Technology |
254 |
GLT6400M08SLI-120ST |
120ns; Ultra low power 512K x 8 CMOS SRAM |
G-LINK Technology |
255 |
GLT6400M16LL-120TC |
120ns; Ultra low power 256K x 16 CMOS SRAM |
G-LINK Technology |
256 |
GLT6400M16SL-120TC |
120ns; Ultra low power 256K x 16 CMOS SRAM |
G-LINK Technology |
257 |
GLT6400M16SLI-120TC |
120ns; Ultra low power 256K x 16 CMOS SRAM |
G-LINK Technology |
258 |
HM-6617/883 |
PROM, 2Kx8 CMOS, high speed, low power, Fast Access Time 90/120ns |
Intersil |
259 |
HM514258AJP-12 |
120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
260 |
HM514258AP-12 |
120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
261 |
HM514258AZP-12 |
120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
262 |
HM53461P-12 |
120ns; V(cc): -0.5 to +7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM |
Hitachi Semiconductor |
263 |
HM53461ZP-12 |
120ns; V(cc): -0.5 to +7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM |
Hitachi Semiconductor |
264 |
HM6264AFP-12 |
8192-word x 8-bit high speed CMOS static RAM, 120ns |
Hitachi Semiconductor |
265 |
HM6264ALFP-12 |
8192-word x 8-bit high speed CMOS static RAM, 120ns |
Hitachi Semiconductor |
266 |
HM6264ALFP-12L |
8192-word x 8-bit high speed CMOS static RAM, 120ns |
Hitachi Semiconductor |
267 |
HM6264ALP-12 |
8192-word x 8-bit high speed CMOS static RAM, 120ns |
Hitachi Semiconductor |
268 |
HM6264ALP-12L |
8192-word x 8-bit high speed CMOS static RAM, 120ns |
Hitachi Semiconductor |
269 |
HM6264ALSP-12 |
8192-word x 8-bit high speed CMOS static RAM, 120ns |
Hitachi Semiconductor |
270 |
HM6264ALSP-12L |
8192-word x 8-bit high speed CMOS static RAM, 120ns |
Hitachi Semiconductor |
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