| No. |
Part Name |
Description |
Manufacturer |
| 241 |
CM100DU-12F |
Trench Gate Design Dual IGBTMOD�� 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 242 |
CM100DUS-12F |
HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 243 |
CM100E3U-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 244 |
CM100TJ-12F |
Trench Gate Design 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 245 |
CM100TU-12F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 246 |
CM100TU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 247 |
CM100TU-12F |
Trench Gate Design Six IGBTMOD�� 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 248 |
CM150DU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 249 |
CM150DU-12F |
Trench Gate Design Dual IGBTMOD�� 150 Amperes/600 Volts |
Powerex Power Semiconductors |
| 250 |
CM150E3U-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 251 |
CM150TJ-12F |
Trench Gate Design Six IGBTMOD�� 150 Amperes/600 Volts |
Powerex Power Semiconductors |
| 252 |
CM150TU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 253 |
CM150TU-12F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 254 |
CM150TU-12F |
Trench Gate Design Six IGBTMOD�� 150 Amperes/600 Volts |
Powerex Power Semiconductors |
| 255 |
CM200DU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 256 |
CM200DU-12F |
Trench Gate Design Dual IGBTMOD�� 200 Amperes/600 Volts |
Powerex Power Semiconductors |
| 257 |
CM200TU-12F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 258 |
CM200TU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 259 |
CM200TU-12F |
Trench Gate Design Six IGBTMOD�� 200 Amperes/600 Volts |
Powerex Power Semiconductors |
| 260 |
CM300DU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 261 |
CM300DU-12F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 262 |
CM300DU-12F |
Trench Gate Design Dual IGBTMOD�� 300 Amperes/600 Volts |
Powerex Power Semiconductors |
| 263 |
CM400DU-12F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 264 |
CM400DU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 265 |
CM400DU-12F |
Trench Gate Design Dual IGBTMOD�� 400 Amperes/600 Volts |
Powerex Power Semiconductors |
| 266 |
CM600HU-12F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 267 |
CM600HU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 268 |
CM600HU-12F |
Trench Gate Design Single IGBTMOD�� 600 Amperes/600 Volts |
Powerex Power Semiconductors |
| 269 |
CM75DU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 270 |
CM75DU-12F |
Trench Gate Design Dual IGBTMOD�� 75 Amperes/600 Volts |
Powerex Power Semiconductors |
| | | |
