No. |
Part Name |
Description |
Manufacturer |
241 |
EIA1314-4P |
13.75-14.5GHz, 4W internally matched power FET |
Excelics Semiconductor |
242 |
EIA1314A-2P |
13.0-14.5GHz, 2W internally matched power FET |
Excelics Semiconductor |
243 |
EIA1314A-4P |
13.0-14.5GHz, 4W internally matched power FET |
Excelics Semiconductor |
244 |
EIB1213-2P |
12.75-13.25GHz, 2W internally matched power FET |
Excelics Semiconductor |
245 |
EIB1213-4P |
12.75-13.25GHz, 4W internally matched power FET |
Excelics Semiconductor |
246 |
EIB1314-2P |
13.75-14.5GHz, 2W internally matched power FET |
Excelics Semiconductor |
247 |
EIB1314-4P |
13.75-14.5GHz, 4W internally matched power FET |
Excelics Semiconductor |
248 |
EL7513 |
Regulator, Step up, Constant Current Boost for 12 White LEDs, VIN =2.6/13.2V, VOUT =18V Max, 1MHz |
Intersil |
249 |
FDD13AN06_F085 |
N-Channel PowerTrench� MOSFET, 60V, 50A, 13.5m? |
Fairchild Semiconductor |
250 |
FDP13AN06A |
N-Channel PowerTrench MOSFET 60V/ 62A/ 13.5m |
Fairchild Semiconductor |
251 |
HMC364 |
GaAs HBT MMIC DIVIDE-BY-2, DC - 13.0 GHz |
Hittite Microwave Corporation |
252 |
HMC364G8 |
SMT GaAs HBT MMIC DIVIDE-BY-2, DC - 13.0 GHz |
Hittite Microwave Corporation |
253 |
HMC365 |
GaAs HBT MMIC DIVIDE-BY-4, DC - 13.0 GHz |
Hittite Microwave Corporation |
254 |
HMC365G8 |
SMT GaAs HBT MMIC DIVIDE-BY-4, DC - 13.0 GHz |
Hittite Microwave Corporation |
255 |
HMC365S8G |
SMT GaAs HBT MMIC DIVIDE-BY-4, DC - 13.0 GHz |
Hittite Microwave Corporation |
256 |
HMC401QS16G |
Ku-BAND MMIC VCO with DIVIDE-BY-8, 13.2 - 13.5 GHz |
Hittite Microwave Corporation |
257 |
HMC401QS16G |
Ku-BAND MMIC VCO with DIVIDE-BY-8, 13.2 - 13.5 GHz |
Hittite Microwave Corporation |
258 |
HMC441LP3 |
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz |
Hittite Microwave Corporation |
259 |
HT6720 |
13.56MHz RFID Transponder |
Holtek Semiconductor |
260 |
HT672A |
13.56MHz RFID Transponder |
Holtek Semiconductor |
261 |
HT672B |
13.56MHz RFID Transponder |
Holtek Semiconductor |
262 |
HT6740 |
13.56MHz RFID Transponder |
Holtek Semiconductor |
263 |
I74F133D |
13.input NAND Gate |
Philips |
264 |
I74F133N |
13.input NAND Gate |
Philips |
265 |
IPB14N03LA |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 25V, D2PAK, RDSon = 13.6mOhm, 30A, LL |
Infineon |
266 |
IPD13N03LA |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 25V, D-PAK, RDSon = 13.0mOhm, 30A, LL |
Infineon |
267 |
IPD14N03L |
OptiMOS Power MOSFET, 30V, DPAK, RDSon = 13.5mOhm, 30A, LL |
Infineon |
268 |
IPF13N03LA |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 25V, Reverse D-PAK, RDSon = 13.3mOhm, 30A, LL |
Infineon |
269 |
IPP14N03LA |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 25V, TO220, RDSon = 13.9mOhm, 30A, LL |
Infineon |
270 |
IPU13N03LA |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 25V, TO251, RDSon = 13.0mOhm, 30A, LL |
Infineon |
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