| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2SK1316L |
Silicon N-Channel MOS FET |
Hitachi Semiconductor |
| 242 |
2SK1316L |
Transistors>Switching/MOSFETs |
Renesas |
| 243 |
2SK1316S |
Silicon N-Channel MOS FET |
Hitachi Semiconductor |
| 244 |
2SK1316S |
Transistors>Switching/MOSFETs |
Renesas |
| 245 |
2SK1317 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
| 246 |
2SK1317 |
Silicon N-Channel MOS FET |
Hitachi Semiconductor |
| 247 |
2SK1317 |
Transistors>Switching/MOSFETs |
Renesas |
| 248 |
2SK1318 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
| 249 |
2SK1318 |
Transistors>Switching/MOSFETs |
Renesas |
| 250 |
2SK2131 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
NEC |
| 251 |
2SK3131 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive Applications |
TOSHIBA |
| 252 |
30131-23 |
Geode GXm Processor Integrated x86 Solution with MMX Support |
National Semiconductor |
| 253 |
307C1311 |
PTCR Overcurrent Protection |
Vishay |
| 254 |
307C1315 |
PTCR Overcurrent Protection |
Vishay |
| 255 |
307C1318 |
PTCR Overcurrent Protection |
Vishay |
| 256 |
37LV128 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV128 is a Serial OTP EPROM device organized internally in a x32 configuration with 131,072 bits and 4096x32 programming word. The 37LV128 is suitable fo |
Microchip |
| 257 |
3N131 |
Silicon PNP Transistor |
Motorola |
| 258 |
3SK131 |
MOS FIELD EFFECT TRANSISTOR |
NEC |
| 259 |
5962-9313101M2A |
High Performance Video Op Amp |
Analog Devices |
| 260 |
5962-9313101MPA |
High Performance Video Op Amp |
Analog Devices |
| 261 |
766131 |
Pulse Transformers |
C&D Technologies |
| 262 |
786131 |
Pulse Transformers |
C&D Technologies |
| 263 |
7861316 |
Pulse Transformers |
C&D Technologies |
| 264 |
82S131 |
2K-bit TTL bipolar PROM |
Philips |
| 265 |
82S131A |
V(cc): +7.0V; 2K-bit TTL bipolar PROM. For phototyping / volume production, sequential controllers, microprogramming, hardwired algorithms, control store, random logic, code conversion |
Philips |
| 266 |
82S131N |
V(cc): +7.0V; 2K-bit TTL bipolar PROM. For phototyping / volume production, sequential controllers, microprogramming, hardwired algorithms, control store, random logic, code conversion |
Philips |
| 267 |
A290D |
Stereo decoder, PLL method, possibly equivalent MC1310P |
RFT |
| 268 |
AA131 |
Germanium diode |
IPRS Baneasa |
| 269 |
AA131 |
Ge POINT CONTACT DIODE |
IPRS Baneasa |
| 270 |
AA131 |
Germanium Point Contact Diode, is intended for use in low impedance detection circuits and A.G.C. damper |
IPRS Baneasa |
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