| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2SK1329 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
| 242 |
2SK1329 |
Silicon N-Channel MOS FET |
Hitachi Semiconductor |
| 243 |
2SK1329 |
Transistors>Switching/MOSFETs |
Renesas |
| 244 |
2SK2132 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
NEC |
| 245 |
2SK2132-T |
High-voltage power MOS FET 180V/4A |
NEC |
| 246 |
2SK3132 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive Applications |
TOSHIBA |
| 247 |
307C1321 |
PTCR Overcurrent Protection |
Vishay |
| 248 |
307C1323 |
PTCR Overcurrent Protection |
Vishay |
| 249 |
307C1325 |
PTCR Overcurrent Protection |
Vishay |
| 250 |
307C1326 |
PTCR Overcurrent Protection |
Vishay |
| 251 |
307C1329 |
PTCR Overcurrent Protection |
Vishay |
| 252 |
30KP132A |
TRANSIENT VOLTAGE SUPPRESSORS |
Micro Commercial Components |
| 253 |
30KP132CA |
TRANSIENT VOLTAGE SUPPRESSORS |
Micro Commercial Components |
| 254 |
30KPA130 |
Diode TVS Single Bi-Dir 132V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 255 |
30KPA132 |
Diode TVS Single Uni-Dir 132V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 256 |
30KPA132 |
Diode TVS Single Uni-Dir 132V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 257 |
30KPA132A |
Diode TVS Single Uni-Dir 132V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 258 |
30KPA132A |
Diode TVS Single Uni-Dir 132V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 259 |
30KPA132Ae3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 260 |
30KPA132C |
Diode TVS Single Bi-Dir 132V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 261 |
30KPA132C |
Diode TVS Single Bi-Dir 132V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 262 |
30KPA132CA |
Diode TVS Single Bi-Dir 132V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 263 |
30KPA132CA |
Diode TVS Single Bi-Dir 132V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 264 |
30KPA132CAe3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 265 |
30KPA132Ce3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 266 |
30KPA132e3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 267 |
30KW132 |
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 268 |
30KW132 |
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 269 |
30KW132A |
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 270 |
30KW132A |
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
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