| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2SK3135L |
Silicon N Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
| 242 |
2SK3135L |
Transistors>Switching/MOSFETs |
Renesas |
| 243 |
2SK3135S |
Silicon N Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
| 244 |
2SK3135S |
Transistors>Switching/MOSFETs |
Renesas |
| 245 |
2X |
Marking for NE68135 part number, 35 NEC (MICRO-X) package, X=LOT CODE |
NEC |
| 246 |
307C1354 |
PTCR Overcurrent Protection |
Vishay |
| 247 |
30R135 |
Resettable PTC. Ihold = 1.35A, Itrip = 2.70A, Vmax =30Vdc. Reel quantity 3000. |
Littelfuse |
| 248 |
3135-14 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 249 |
3135-25 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 250 |
3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 251 |
3135-35 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 252 |
3135-45 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 253 |
3135-7 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 254 |
3135GN-280LV |
GaN Transistors |
Microsemi |
| 255 |
3N135 |
Silicon PNP Transistor |
Motorola |
| 256 |
3SK135A |
RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD |
NEC |
| 257 |
3SK135A-T1 |
For UHF TV tuner high frequency amplification |
NEC |
| 258 |
3SK135A-T2 |
For UHF TV tuner high frequency amplification |
NEC |
| 259 |
409CNQ135 |
135V 400A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package |
International Rectifier |
| 260 |
409CNQ135 |
135V 400A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package |
International Rectifier |
| 261 |
409DMQ135 |
135V 400A Schottky DOUBLER Diode in a TO-244AB Isolated package |
International Rectifier |
| 262 |
409DMQ135 |
135V 400A Schottky DOUBLER Diode in a TO-244AB Isolated package |
International Rectifier |
| 263 |
40CPQ135 |
SCHOTTKY RECTIFIER |
Sensitron |
| 264 |
54S135 |
Quad Exclusive-OR/NOR gate |
Fairchild Semiconductor |
| 265 |
54S135 |
QUAD EXCLUSIVE-OR / NOR GATE |
Unknow |
| 266 |
54S135DM |
QUAD EXCLUSIVE-OR / NOR GATE |
Unknow |
| 267 |
54S135FM |
QUAD EXCLUSIVE-OR / NOR GATE |
Unknow |
| 268 |
5KP110A |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 122 V, Vbrmax = 135 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
| 269 |
5KP110CA |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 122 V, Vbrmax = 135 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
| 270 |
60R135 |
Radial Leaded PTC |
Littelfuse |
| | | |
