| No. |
Part Name |
Description |
Manufacturer |
| 241 |
HM6264AP-15 |
8192-word x 8-bit high speed CMOS static RAM, 150ns |
Hitachi Semiconductor |
| 242 |
HM6264ASP-15 |
8192-word x 8-bit high speed CMOS static RAM, 150ns |
Hitachi Semiconductor |
| 243 |
HY29F040AC-15 |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 150ns |
Hynix Semiconductor |
| 244 |
HY29F040AC-15E |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 150ns |
Hynix Semiconductor |
| 245 |
HY29F040AC-15I |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 150ns |
Hynix Semiconductor |
| 246 |
HY29F040AP-15 |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 150ns |
Hynix Semiconductor |
| 247 |
HY29F040AP-15E |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 150ns |
Hynix Semiconductor |
| 248 |
HY29F040AP-15I |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 150ns |
Hynix Semiconductor |
| 249 |
HY29F040AR-15 |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 150ns |
Hynix Semiconductor |
| 250 |
HY29F040AR-15E |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 150ns |
Hynix Semiconductor |
| 251 |
HY29F040AR-15I |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 150ns |
Hynix Semiconductor |
| 252 |
HY29F040AT-15 |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 150ns |
Hynix Semiconductor |
| 253 |
HY29F040AT-15E |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 150ns |
Hynix Semiconductor |
| 254 |
HY29F040AT-15I |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 150ns |
Hynix Semiconductor |
| 255 |
HY57V648010TC-15 |
4Mbit x 2bank x 8 SDRAM, LVTTL, 150ns |
Hynix Semiconductor |
| 256 |
HY57V658010TC-15 |
4Mbit x 2bank x 8 SDRAM, LVTTL, 150ns |
Hynix Semiconductor |
| 257 |
HY57V658020TC-15 |
2Mbit x 4bank x 8 SDRAM, LVTTL, 150ns |
Hynix Semiconductor |
| 258 |
HY6264LP-15 |
8K x 8-bit CMOS SRAM, 150ns |
Hynix Semiconductor |
| 259 |
KM41256AJ-15 |
256K x 1-bit DRAM, 150ns |
Samsung Electronic |
| 260 |
KM41256AP-15 |
256K x 1-bit DRAM, 150ns |
Samsung Electronic |
| 261 |
KM41256AZ-15 |
256K x 1-bit DRAM, 150ns |
Samsung Electronic |
| 262 |
LC3517A-15 |
150ns, 2048-word x 8-bit CMOS static RAM (SRAM) |
SANYO |
| 263 |
LC3517AL-15 |
150ns, 2048-word x 8-bit CMOS static RAM (SRAM) |
SANYO |
| 264 |
LC3517AM-15 |
150ns, 2048-word x 8-bit CMOS static RAM (SRAM) |
SANYO |
| 265 |
LC3517AML-15 |
150ns, 2048-word x 8-bit CMOS static RAM (SRAM) |
SANYO |
| 266 |
LC3517AS-15 |
150ns, 2048-word x 8-bit CMOS static RAM (SRAM) |
SANYO |
| 267 |
LC3517ASL-15 |
150ns, 2048-word x 8-bit CMOS static RAM (SRAM) |
SANYO |
| 268 |
LC3664R-15 |
Access time: 150ns; V(cc)max: +7V; 64K (8192 words x 8-bit) SRAM |
SANYO |
| 269 |
LC3664RL-15 |
Access time: 150ns; V(cc)max: +7V; 64K (8192 words x 8-bit) SRAM |
SANYO |
| 270 |
LC3664RM-15 |
Access time: 150ns; V(cc)max: +7V; 64K (8192 words x 8-bit) SRAM |
SANYO |
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