No. |
Part Name |
Description |
Manufacturer |
241 |
1N138B |
Silicon Signal Diode |
Motorola |
242 |
1N139 |
50 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
243 |
1N139 |
Gold Bond Germanium Diode |
ITT Semiconductors |
244 |
1N139 |
Germanium Signal Diode |
Motorola |
245 |
1N1396 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
246 |
1N1396 |
Rectifier Diode |
Motorola |
247 |
1N1397 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
248 |
1N1397 |
Rectifier Diode |
Motorola |
249 |
1N1398 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
250 |
1N1398 |
Rectifier Diode |
Motorola |
251 |
1N1399 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
252 |
1N1399 |
Rectifier Diode |
Motorola |
253 |
R3111N131A-TR |
Low voltage detector. Detector threshold (-Vdet) 1.3V. Output type: Nch open drain. Standard taping specification TR |
Ricoh |
254 |
R3111N131C-TR |
Low voltage detector. Detector threshold (-Vdet) 1.3V. Output type: CMOS. Standard taping specification TR |
Ricoh |
255 |
RT1N137L |
Transistor with resistor for switching application. Silicon NPN epitaxial type. |
Isahaya Electronics Corporation |
256 |
RT1N137P |
Transistor with resistor for switching application. Silicon NPN epitaxial type. |
Isahaya Electronics Corporation |
257 |
SAY42 |
Si switching diode, possibly equivalent 1N138A |
RFT |
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