| No. |
Part Name |
Description |
Manufacturer |
| 241 |
MIC5476 |
2 master-slave JK flip-flops |
ITT Semiconductors |
| 242 |
MIC5476J |
2 master-slave JK flip-flops, ceramic housing |
ITT Semiconductors |
| 243 |
MIC5476N |
2 master-slave JK flip-flops, platic housing |
ITT Semiconductors |
| 244 |
MIC74107 |
2 Master-Slave JK Flip-Flop |
ITT Semiconductors |
| 245 |
MIC74107J |
2 Master-Slave JK Flip-Flop, ceramic housing |
ITT Semiconductors |
| 246 |
MIC74107N |
2 Master-Slave JK Flip-Flop, plastic housing |
ITT Semiconductors |
| 247 |
MIC7473 |
2 Master-Slave JK flip-flops |
ITT Semiconductors |
| 248 |
MIC7473J |
2 Master-Slave JK flip-flops, ceramic housing |
ITT Semiconductors |
| 249 |
MIC7473N |
2 Master-Slave JK flip-flops, plastic housing |
ITT Semiconductors |
| 250 |
MIC7476 |
2 master-slave JK flip-flops |
ITT Semiconductors |
| 251 |
MIC7476J |
2 master-slave JK flip-flops, ceramic housing |
ITT Semiconductors |
| 252 |
MIC7476N |
2 master-slave JK flip-flops, platic housing |
ITT Semiconductors |
| 253 |
ML7701A |
2 mA, laser diode for optical communication |
Mitsubishi Electric Corporation |
| 254 |
ML7702 |
2 mA, laser diode for optical communication |
Mitsubishi Electric Corporation |
| 255 |
ML7911A |
2 mA, laser diode for optical communication |
Mitsubishi Electric Corporation |
| 256 |
ML7912 |
2 mA, laser diode for optical communication |
Mitsubishi Electric Corporation |
| 257 |
ML9701A |
2 mA, laser diode for optical communication |
Mitsubishi Electric Corporation |
| 258 |
ML9702 |
2 mA, laser diode for optical communication |
Mitsubishi Electric Corporation |
| 259 |
ML9911A |
2 mA, laser diode for optical communication |
Mitsubishi Electric Corporation |
| 260 |
ML9912 |
2 mA, laser diode for optical communication |
Mitsubishi Electric Corporation |
| 261 |
MMBZ5250B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 20.0 V. Test current 6.2 mA. |
Chenyi Electronics |
| 262 |
MMBZ5252B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 24.0 V. Test current 5.2 mA. |
Chenyi Electronics |
| 263 |
MMBZ5256B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 30.0 V. Test current 4.2 mA. |
Chenyi Electronics |
| 264 |
MV2454 |
High efficiency green, 2 mA, solid state lamp |
General Instruments |
| 265 |
PD7006 |
2 mA, 20 V, InGaAs photodiode for optical communication |
Mitsubishi Electric Corporation |
| 266 |
PD7936 |
2 mA, 20 V, InGaAs photodiode for optical communication |
Mitsubishi Electric Corporation |
| 267 |
PEEL18LV8Z-25 |
10 inputs 8 I/Os 8 registers 12 macro cells configurable 20 pins 2.7-3.6V zero power SPLD |
Anachip |
| 268 |
Q62702-F1051 |
NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.) |
Siemens |
| 269 |
Q62702-F1316 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA) |
Siemens |
| 270 |
Q62702-F1382 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) |
Siemens |
| | | |
