DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for 2.3

Datasheets found :: 2133
Page: | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 |
No. Part Name Description Manufacturer
241 AM7996JCB IEEE 802.3/Ethernet/Cheapernet Transceiver Advanced Micro Devices
242 AM7996JCTR IEEE 802.3/Ethernet/Cheapernet Transceiver Advanced Micro Devices
243 AM7996PC IEEE 802.3/Ethernet/Cheapernet Transceiver Advanced Micro Devices
244 AM7996PCB IEEE 802.3/Ethernet/Cheapernet Transceiver Advanced Micro Devices
245 AM7996PCTR IEEE 802.3/Ethernet/Cheapernet Transceiver Advanced Micro Devices
246 AM82223-004 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
247 AM82223-012 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
248 AM82223-014 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
249 AM82223-018 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
250 AM82223-020 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
251 AM82324-020 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz SGS Thomson Microelectronics
252 AM82325-040 High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz SGS Thomson Microelectronics
253 AM82327-004 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
254 AM82327-006 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
255 AM82327-010 Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
256 AM82327-015 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
257 AMD-K6_200AFR Processor AMD-K6 family, operating voltage=2.1V�2.3V, 200MHz Advanced Micro Devices
258 AMD-K6_233AFR Processor AMD-K6 family, operating voltage=2.1V�2.3V, 233MHz Advanced Micro Devices
259 AMD-K6_266AFR Processor AMD-K6 family, operating voltage=2.1V�2.3V, 266MHz Advanced Micro Devices
260 AMD-K6_300AFR Processor AMD-K6 family, operating voltage=2.1V�2.3V, 300MHz Advanced Micro Devices
261 AME8510AEEVAFE23 Threshold voltage: 2.32V; micropower uP watch dog timer AME
262 AME8510AEEVAFX23 Threshold voltage: 2.32V; micropower uP watch dog timer AME
263 AME8510AEEVBFE23 Threshold voltage: 2.32V; micropower uP watch dog timer AME
264 AME8510AEEVBFX23 Threshold voltage: 2.32V; micropower uP watch dog timer AME
265 AME8510AEEVCFE23 Threshold voltage: 2.32V; micropower uP watch dog timer AME
266 AME8510AEEVCFX23 Threshold voltage: 2.32V; micropower uP watch dog timer AME
267 AME8510AEEVDFE23 Threshold voltage: 2.32V; micropower uP watch dog timer AME
268 AME8510AEEVDFX23 Threshold voltage: 2.32V; micropower uP watch dog timer AME
269 AME8510AEEVEFE23 Threshold voltage: 2.32V; micropower uP watch dog timer AME
270 AME8510AEEVEFX23 Threshold voltage: 2.32V; micropower uP watch dog timer AME


Datasheets found :: 2133
Page: | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 |



© 2024 - www Datasheet Catalog com