| No. |
Part Name |
Description |
Manufacturer |
| 241 |
BLS7G2730LS-200P |
LDMOS S-band radar power transistor |
NXP Semiconductors |
| 242 |
BQ26200PW |
FLASH-Based Precision Multi-Chemistry Charge/Discharge Counter W/1-Wire I/F (HDQ) |
Texas Instruments |
| 243 |
BQ26200PWG4 |
FLASH-Based Precision Multi-Chemistry Charge/Discharge Counter W/1-Wire I/F (HDQ) 8-TSSOP 0 to 70 |
Texas Instruments |
| 244 |
BQ26200PWR |
FLASH-Based Precision Multi-Chemistry Charge/Discharge Counter W/1-Wire I/F (HDQ) |
Texas Instruments |
| 245 |
BQ26200PWRG4 |
FLASH-Based Precision Multi-Chemistry Charge/Discharge Counter W/1-Wire I/F (HDQ) 8-TSSOP 0 to 70 |
Texas Instruments |
| 246 |
BQ76200PW |
High-Side N-Channel FET Driver 16-TSSOP -40 to 85 |
Texas Instruments |
| 247 |
BQ76200PWR |
High-Side N-Channel FET Driver 16-TSSOP -40 to 85 |
Texas Instruments |
| 248 |
BSO200P03S |
Low Voltage MOSFETs - OptiMOS MOSFET, -30V, SO-8, Ron = 20m |
Infineon |
| 249 |
BYT200PIV-400 |
ULTRAFAST POWER RECTIFIER DIODE |
SGS Thomson Microelectronics |
| 250 |
BYT200PIV-400 |
ULTRAFAST POWER RECTIFIER DIODE |
ST Microelectronics |
| 251 |
BZD17C200P |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
| 252 |
BZD27C200P |
Discrete Devices -Diode-Zener Diode & Array |
Taiwan Semiconductor |
| 253 |
BZD27C200P |
Zener Diodes with Surge Current Specification |
Vishay |
| 254 |
BZD27C3V6P TO BZD27C200P |
Voltage Regulator Diodes |
Vishay |
| 255 |
CGHV40200PP |
200W RF Power GaN HEMT |
Wolfspeed |
| 256 |
CY27C256-200PC |
32K x 8-Bit CMOS EPROM |
Cypress |
| 257 |
CZRM27C200P |
Surface Mount Zener Diode |
Comchip Technology |
| 258 |
CZRM27C200PA |
0.8W surface mount zener diode. Vzmin 188 V, Vzmax 212 V, 1%. |
Comchip Technology |
| 259 |
CZRM27C200PB |
0.8W surface mount zener diode. Vzmin 188 V, Vzmax 212 V, 2%. |
Comchip Technology |
| 260 |
CZRM27C200PC |
0.8W surface mount zener diode. Vzmin 188 V, Vzmax 212 V, 5%. |
Comchip Technology |
| 261 |
DFM200PXM33-A000 |
Fast Recovery Diode Module Preliminary Information |
Dynex Semiconductor |
| 262 |
DIM200PHM33-A000 |
Half Bridge IGBT Module Preliminary Information |
Dynex Semiconductor |
| 263 |
DLPA200PFP |
DMD Micromirror Driver 80-HTQFP |
Texas Instruments |
| 264 |
DS4M200P+33 |
3.3V Margining Clock Oscillator with LVPECL/LVDS Output |
MAXIM - Dallas Semiconductor |
| 265 |
EN27LV010200P |
1Megabit low voltage EPROM (128K x 8). Speed 200ns. 3.0V to 3.6V Vcc tolerance. |
Eon Silicon Solution |
| 266 |
EN27LV010200PI |
1Megabit low voltage EPROM (128K x 8). Speed 200ns. 3.0V to 3.6V Vcc tolerance. |
Eon Silicon Solution |
| 267 |
EN27LV010B200P |
1Megabit low voltage EPROM (128K x 8). Speed 200ns. 2.7V to 3.6V Vcc tolerance. |
Eon Silicon Solution |
| 268 |
EN27LV010B200PI |
1Megabit low voltage EPROM (128K x 8). Speed 200ns. 2.7V to 3.6V Vcc tolerance. |
Eon Silicon Solution |
| 269 |
EN27LV020200P |
2Megabit low voltage EPROM (256K x 8). Speed 200ns. Single +3.3V power supply - regulated power supply 3.0V - 3.6V |
Eon Silicon Solution |
| 270 |
EN27LV020200PI |
2Megabit low voltage EPROM (256K x 8). Speed 200ns. Single +3.3V power supply - regulated power supply 3.0V - 3.6V |
Eon Silicon Solution |
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