No. |
Part Name |
Description |
Manufacturer |
241 |
NAND128W3A2AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
242 |
NAND128W4A2AN1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
243 |
NAND128W4A2AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
244 |
NAND256R3A2AN1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
245 |
NAND256R3A2AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
246 |
NAND256R4A2AN1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
247 |
NAND256R4A2AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
248 |
NAND256W3A2AN1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
249 |
NAND256W3A2AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
250 |
NAND256W4A2AN1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
251 |
NAND256W4A2AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
252 |
NAND512R3A2AN1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
253 |
NAND512R3A2AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
254 |
NAND512R4A2AN1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
255 |
NAND512R4A2AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
256 |
NAND512W3A2AN1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
257 |
NAND512W3A2AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
258 |
NAND512W4A2AN1 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
259 |
NAND512W4A2AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
ST Microelectronics |
260 |
NE5532AN |
Internally-compensated dual low noise operational amplifier |
Philips |
261 |
NE602AN |
DOUBLE BALANCED MIXER AND OSCILLATOR |
Philips |
262 |
NE612AN |
Double-balanced mixer and oscillator |
Philips |
263 |
NMC27C512AN15 |
150 ns, Vcc=5V+/-5%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
264 |
NMC27C512AN150 |
150 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
265 |
NMC27C512AN17 |
170 ns, Vcc=5V+/-5%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
266 |
NMC27C512AN170 |
170 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
267 |
NMC27C512AN20 |
200 ns, Vcc=5V+/-5%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
268 |
NMC27C512AN200 |
200 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
269 |
NMC27C512AN25 |
250 ns, Vcc=5V+/-5%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
270 |
NMC27C512AN250 |
250 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
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