| No. |
Part Name |
Description |
Manufacturer |
| 241 |
TK12E60U |
Power MOSFET (N-ch 500V<VDSS≤700V) |
TOSHIBA |
| 242 |
TK12E60W |
Power MOSFET (N-ch 500V<VDSS≤700V) |
TOSHIBA |
| 243 |
TM4C1232E6PM |
High performance 32-bit ARM? Cortex?-M4F based MCU 64-LQFP -40 to 85 |
Texas Instruments |
| 244 |
TM4C1232E6PMI7 |
High performance 32-bit ARM? Cortex?-M4F based MCU 64-LQFP -40 to 85 |
Texas Instruments |
| 245 |
TM4C1232E6PMI7R |
High performance 32-bit ARM? Cortex?-M4F based MCU 64-LQFP -40 to 85 |
Texas Instruments |
| 246 |
TRS12E65C |
SiC Schottky barrier diode |
TOSHIBA |
| 247 |
ZX5T2E6 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors |
Diodes |
| 248 |
ZX5T2E6 |
PNP Low Saturation Transistor optimized for charger circuits |
Zetex Semiconductors |
| 249 |
ZX5T2E6TA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors |
Diodes |
| 250 |
ZXGD3002E6 |
9A(PEAK) GATE DRIVER IN SOT26 |
Diodes |
| 251 |
ZXGD3002E6TA |
9A(PEAK) GATE DRIVER IN SOT26 |
Diodes |
| 252 |
ZXM62N02E6 |
20V N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 253 |
ZXM62N02E6 |
N-channel MOSFET-Not recommended for new designs |
Zetex Semiconductors |
| 254 |
ZXM62N02E6TA |
20V N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 255 |
ZXM62P02E6 |
20V P-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 256 |
ZXM62P02E6 |
P-channel MOSFET |
Zetex Semiconductors |
| 257 |
ZXM62P02E6TA |
20V P-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 258 |
ZXTC2062E6 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors |
Diodes |
| 259 |
ZXTC2062E6TA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors |
Diodes |
| | | |
