| No. |
Part Name |
Description |
Manufacturer |
| 241 |
IXFH12N100F |
HiPerRF Power MOSFETs |
IXYS Corporation |
| 242 |
IXFH12N100Q |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 243 |
IXFM12N100 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 244 |
IXFM12N100 |
HiPerFET Power MOSFETs |
IXYS Corporation |
| 245 |
IXFR12N100F |
HiPerFET Power MOSFETs ISOPLUS247 |
IXYS Corporation |
| 246 |
IXFR12N100Q |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 247 |
IXFT12N100 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 248 |
IXFT12N100F |
HiPerRF Power MOSFETs |
IXYS Corporation |
| 249 |
IXFT12N100Q |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 250 |
IXGA12N100 |
1000V IGBT |
IXYS |
| 251 |
IXGA12N100A |
1000V IGBT |
IXYS |
| 252 |
IXGA12N100AU1 |
1000V IGBT |
IXYS |
| 253 |
IXGA12N100U1 |
1000V IGBT |
IXYS |
| 254 |
IXGH12N100 |
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode |
IXYS Corporation |
| 255 |
IXGH12N100A |
1000V low voltage high speed IGBT |
IXYS |
| 256 |
IXGH12N100AU1 |
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode |
IXYS Corporation |
| 257 |
IXGH12N100U1 |
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode |
IXYS Corporation |
| 258 |
IXGP12N100 |
1000V IGBT |
IXYS |
| 259 |
IXGP12N100A |
1000V IGBT |
IXYS |
| 260 |
IXGP12N100AU1 |
1000V IGBT |
IXYS |
| 261 |
IXGP12N100U1 |
1000V IGBT |
IXYS |
| 262 |
IXGP2N100 |
1000V high voltage IGBT |
IXYS |
| 263 |
IXGP2N100A |
1000V high voltage IGBT |
IXYS |
| 264 |
IXTA2N100 |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
| 265 |
IXTH12N100 |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
| 266 |
IXTM12N100 |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
| 267 |
IXTP2N100 |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
| 268 |
JAN2N1016B |
NPN Transistor |
Microsemi |
| 269 |
JAN2N1016C |
NPN Transistor |
Microsemi |
| 270 |
MTM12N10 |
POWER FIELD EFFECT TRANSISTOR |
Motorola |
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