| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2N559 |
Germanium PNP Transistor |
Motorola |
| 242 |
2N5590 |
NPN silicon RF power transistor |
Motorola |
| 243 |
2N5597 |
Silicon PNP Power Transistors TO-66 package |
Savantic |
| 244 |
2N5597 |
Bipolar PNP Device in a Hermetically sealed TO66 Metal Package |
SemeLAB |
| 245 |
2N5598 |
Silicon NPN Power Transistors TO-66 package |
Savantic |
| 246 |
2N5599 |
Silicon PNP Power Transistors TO-66 package |
Savantic |
| 247 |
2N5599 |
Bipolar PNP Device in a Hermetically sealed TO66 Metal Package |
SemeLAB |
| 248 |
FM27C512N55L |
512K-Bit (64K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
| 249 |
H2N5551 |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 250 |
HN_2N5550 |
140 V, NPN silicon expitaxial planar transistor |
Honey Technology |
| 251 |
HN_2N5551 |
160 V, NPN silicon expitaxial planar transistor |
Honey Technology |
| 252 |
IXFB72N55Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 253 |
IXFH22N55 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 254 |
IXFN72N55Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 255 |
J2N5551UB1 |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 256 |
JAN2N5581 |
NPN Transistor |
Microsemi |
| 257 |
JAN2N5582 |
NPN Transistor |
Microsemi |
| 258 |
JAN2N559-1 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
| 259 |
JAN2N559-2 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
| 260 |
JAN2N559-3 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
| 261 |
JANS2N5551UBG |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 262 |
JANS2N5551UBT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 263 |
JANSR2N5551UBG |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 264 |
JANSR2N5551UBT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 265 |
JANTX2N5581 |
NPN Transistor |
Microsemi |
| 266 |
JANTX2N5582 |
NPN Transistor |
Microsemi |
| 267 |
JANTXV2N5581 |
NPN Transistor |
Microsemi |
| 268 |
JANTXV2N5582 |
NPN Transistor |
Microsemi |
| 269 |
KT862N55 |
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .05 |
Optek Technology |
| 270 |
KT872N55 |
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches |
Optek Technology |
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