No. |
Part Name |
Description |
Manufacturer |
241 |
2N5672 |
Silicon NPN Power Transistor, TO-3 (cont d) package |
Silicon Transistor Corporation |
242 |
2N5672MP |
Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
243 |
2N5672S |
Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
244 |
2N5675 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
245 |
2N5676 |
Silicon PNP Power Transistors TO-66 package |
Savantic |
246 |
2N5679 |
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS |
Boca Semiconductor Corporation |
247 |
2N5679 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
248 |
2N5679 |
10.000W High Voltage PNP Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
249 |
2N5679 |
1.0 Amp 10 watt NPN-PNP complementary power. |
Fairchild Semiconductor |
250 |
2N5679 |
PNP Transistor |
Microsemi |
251 |
2N5679 |
1A complementary silicon power transistor |
Motorola |
252 |
2N5679 |
Silicon PNP Transistor |
Motorola |
253 |
2N5679 |
Trans GP BJT PNP 100V 1A 3-Pin TO-39 Box |
New Jersey Semiconductor |
254 |
2N5679 |
PNP SILICON TRANSISTORS |
SemeLAB |
255 |
2N568 |
Germanium PNP Transistor |
Motorola |
256 |
2N5680 |
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS |
Boca Semiconductor Corporation |
257 |
2N5680 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
258 |
2N5680 |
10.000W High Voltage PNP Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
259 |
2N5680 |
1.0 Amp 10 watt NPN-PNP complementary power. |
Fairchild Semiconductor |
260 |
2N5680 |
PNP Transistor |
Microsemi |
261 |
2N5680 |
1A complementary silicon power transistor |
Motorola |
262 |
2N5680 |
Silicon PNP Transistor |
Motorola |
263 |
2N5680 |
Trans GP BJT PNP 120V 1A 3-Pin TO-39 |
New Jersey Semiconductor |
264 |
2N5680 |
PNP SILICON TRANSISTORS |
SemeLAB |
265 |
2N5681 |
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS |
Boca Semiconductor Corporation |
266 |
2N5681 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
267 |
2N5681 |
10.000W High Voltage NPN Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
268 |
2N5681 |
1.0 Amp 10 watt NPN-PNP complementary power. |
Fairchild Semiconductor |
269 |
2N5681 |
NPN Transistor |
Microsemi |
270 |
2N5681 |
1A complementary silicon power transistor |
Motorola |
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